YAMANAKA Michinari | ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.
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概要
関連著者
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YAMANAKA Michinari
ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.
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Yamanaka M
Electron Devices Division Electrotechnical Laboratory
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Yamanaka Michinari
Ulsi Process Technology Development Center Matsushita Electric Industrial Co. Ltd.
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Hayashi Shinji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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Hayashi S
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Hayashi Shigenori
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Hayashi Shigenori
Faculty Of Engineering Osaka University
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Kubota M
Opto-electronics Laboratories Oki Electric Industry Co. Ltd.
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KUBOTA Masafumi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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Kubota Masafumi
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Yamada T
Tokyo Inst. Of Technol. Tokyo Jpn
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Yamada T
Daido Inst. Technol. Nagoya Jpn
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Yamada T
Sophia Univ. Tokyo Jpn
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Yamada T
Ntt Basic Research Laboratories:(present Address) Ntt Opto-electronics Laboratories
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Yamada T
Tokai Univ. Hiratsuka Jpn
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Harada Y
Univ. Tokyo Tokyo Jpn
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Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corp.
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MORIWAKI Masaru
ULSI Process Technology Development Center, Matsushita Electronics Corporation
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YAMADA Takayuki
ULSI Process Technology Development Center, Matsushita Electronics Corporation
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FUJII Shinji
ULSI Process Technology Development Center, Matsushita Electronics Corporation
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Yamada Tomoyuki
Research Laboratory Oki Electric Industry Co. Ltd.
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Fujii S
It Components Division Sumitomo Electric Industries Ltd.
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Yamada T
Department Of Electrical And Electronics Engineering Sophia University
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Harada Y
Life Culture Department Seitoku University
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Fujii S
Ion Engineering Research Institute Corp.
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Ogura M
Jst‐crest Ibaraki Jpn
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Ogura Masahiko
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Moriwaki Masaru
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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OGURA Mototsugu
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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Fujii Shinji
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Yamada Takayuki
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.
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Mori Yoshihiro
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Fujiwara Nobuo
Ulsi Laboratory Mitsubishi Electric Corporation
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Aoi Nobuo
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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SAKAMORI Shigenori
ULSI Laboratory, Mitsubishi Electric Corporation
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MIYATAKE Hiroshi
ULSI Laboratory, Mitsubishi Electric Corporation
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SHIBATA Jun
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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Fujiwara N
Ulsi Development Center Mitsubishi Electric Corporation
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OIKAWA Kota
ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.
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SASAKI Tomoyuki
ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.
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NAKAGAWA Hideo
Association of Super-Advanced Electronics Technologies (ASET)
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Nakagawa Hideo
Association Of Super-advanced Electronics Technologies(aset)
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Shibata Jun
Ulsi Process Technology Development Center Matsushita Electronics Corporation
著作論文
- Transformation of Dense Contact Holes during SiO_2 Etching
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
- Contact Hole Etch Scaling toward 0.1 μm
- Spatial and Temporal Behavior of Radicals in Inductively Coupled Plasm for SiO_2 Etching
- Highly Selective SiO2 Etching Using Inductively Coupled Plasma Source with a Multispiral Coil