Yamada T | Sophia Univ. Tokyo Jpn
スポンサーリンク
概要
関連著者
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Yamada T
Sophia Univ. Tokyo Jpn
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Yamada T
Tokyo Inst. Technol. Tokyo Jpn
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Yamada T
Tokyo Inst. Of Technol. Tokyo Jpn
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Yamada T
Daido Inst. Technol. Nagoya Jpn
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Yamada T
Tokai Univ. Hiratsuka Jpn
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Yamada T
Ntt Basic Research Laboratories:(present Address) Ntt Opto-electronics Laboratories
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Yamada Tomoyuki
Research Laboratory Oki Electric Industry Co. Ltd.
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Tajima Y
Sharp Corp. Nara
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Tajima Y
Ntt Applied Electronics Laboratories
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Nakamura Shuji
Department Of Research And Development Nichia Chemical Industries Ltd.
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Yamada Tomoaki
Ntt Basic Research Laboratories
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Kinoshita Kyoichi
Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency
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Kinoshita K
Ntt Basic Research Laboratories
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Kinoshita K
Physical Science Laboratory Ntt Basic Research Laboratories
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Shibata H
Toshiba Corp. Yokohama Jpn
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SENOH Masayuki
Department of Research and Development, Nichia Chemical Industries, Ltd.
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NAGAHAMA Shin-ichi
Department of Research and Development, Nichia Chemical Industries, Ltd.
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KIYOKU Hiroyuki
Department of Research and Development, Nichia Chemical Industries, Ltd.
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SUGIMOTO Yasunobu
Department of Research and Development, Nichia Chemical Industries, Ltd.
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IWASA Naruhito
Department of Research and Development, Nichia Chemical Industries, Ltd.
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YAMADA Takao
Department of Research and Development, Nichia Chemical Industries, Ltd.
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Shibata H
Electrotechnical Lab. Ibaraki Jpn
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KINOSHITA Kyoichi
NTT Basic Research Laboratory
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Sano M
Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.
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Mukai T
Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.
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Mukai Takashi
Kyoto Univ. Kyoto Jpn
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Takahashi Masayoshi
Nitride Semiconductor Research Laboratory Nichia Corporation
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Mukai Takashi
Department Of Research And Development; Nichia Chemical Industries Ltd.
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MATSUSHITA Toshio
Department of Chemistry, Graduate School of Science, Osaka City University
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Kinoshita Kyoichi
Ntt Basic Research Laboratories
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Mukai Takashi
Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.
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Mukai Takashi
Nichia Corp. Tokushima Jpn
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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Kindo Koichi
Ntt Basic Research Laboratory
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Yamada Takumi
Department of Cardiology, Nagoya University Graduate School of Medicine
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MATSUDA Azusa
NTT Basic Research Laboratory
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TAKAHASHI Kiyoshi
Department of Medicine, National Minami-Okayama Hospital
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Takahashi Kiyoshi
Department Of Internal Medicine Ii Okayama University Graduate School Of Medicine And Dentistry
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SHIBATA Hiroyuki
NTT Basic Research Laboraiories
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Matsuda A
Ntt Basic Research Laboratories:department Of Applied Physics. Faculty Of Science Science University
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Matsuda Azusa
Ntt Basic Research Laboratories
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Watanabe T
Ntt Basic Research Laboratory
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Takahashi K
Tokyo Inst. Technol. Yokohama Jpn
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Watanabe T
Kobe Univ. Kobe
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Konagai Makoto
Department Of Electrical And Electronic Engineering. Tokyo Institute Of Technology
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KOZAKI Tokuya
Department of Research and Development, Nichia Chemical Industries, Ltd.
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UMEMOTO Hitoshi
Department of Research and Development, Nichia Chemical Industries, Ltd.
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SANO Masahiko
Department of Research and Development, Nichia Chemical Industries, Ltd.
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CHOCHO Kazuyuki
Department of Research and Development, Nichia Chemical Industries, Ltd.
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Chocho Kazuyuki
Department Of Research And Development Nichia Chemical Industries Ltd
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Yamada Takashi
Department of Molecular Biotechnology, Graduate School of Advanced Sciences of Matter, Hiroshima Uni
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伊達 宗行
Department Of Physics Faculty Of Science Osaka University
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DATE Muneyuki
Department of Physics, Faculty of Science, Osaka University
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SUGIYAMA Kiyohiro
Department of Physics, Faculty of Science, Osaka University
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Date Muneyuki
Advanced Science Research Center Jaeri Tokai
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Ishii T
Idemitsu Material Co. Ltd. Chiba Jpn
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Sugino T
Osaka Univ. Osaka Jpn
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Date Muneyuki
Graduate School Of Science Osaka University
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SHIRAFUJI Junji
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Ishii T
Kyoto Univ. Kyoto Jpn
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WATANABE Takao
NTT Electrical communications Laboratories
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KINOSHITA Kyoichi
NTT Electrical communications Laboratories
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MATSUDA Azusa
NTT Electrical communications Laboratories
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YAMADA Tomoaki
NTT Electrical communications Laboratoriies
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Sugiyama Kiyohiro
Department Of Advanced Sciences The Graduate University For Advanced Studies
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Ishii T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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TOKUMITSU Eisuke
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Yamada Takashi
Department Of Chemistry Faculty Of Science And Engineering Konan University
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YAMAGISHI Akio
Research Center for Extreme Materials, Osaka University
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Fuke Hiroyuki
Department of Physics,Faculty of Science,Osaka University
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MAEDA Yoshinobu
Department of Pathology, Toyama Red Cross Hospital
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Kikuchi Akihiko
Department Of Electrical And Electronics Engineering Sophia University
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Kikuchi A
Institute Of Advanced Biomedical Engineering And Science Tokyo Women's Medical University
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Yamada T
Univ. Tokyo Tokyo Jpn
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Takase Yuichi
Graduate School Of Frontier Sciences The University Of Tokyo
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Ejiri Akira
Graduate School Of Frontier Sciences The University Of Tokyo
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Kishino Katsumi
Department Of Electrical And Electronic Engineering Sophia University
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Takahashi K
National Inst. Res. In Inorganic Materials Ibaraki Jpn
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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Asano Y
Hokkaido Univ. Sapporo Jpn
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SAITO Koki
Department of Electronics and Information Science, Teikyo University of Science and Technology
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ISHII Takao
NTT Basic Research Laboratory
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WATANABE Takao
NTT Basic Research Laboratory
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Sato K
Depertment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Abe Hajime
Department Of Applied Physics Graduate School Of Engineering Osaka University
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Saito K
Department Of Materials Technology Chiba University
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Fuke H
The Authors Are With Toshiba
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Fuke Hiroyuki
Department Of Internal Medicine Saiseikai Matsusaka General Hospital
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NOGUCHI Yoshio
NTT Opto-electronics Laboratories
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Yamagishi A
Osaka Univ. Toyonoka
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Yamagishi Akio
Research Center Of Extreme Materials Osaka University
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Yamagishi Akio
Research Center For Extreme Materials Osaka University
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YAMADA Takumi
NTT Basic Research Laboratories
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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SHIBATA Hiroyuki
NTT Electrical communications Laboratories
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ASANO Yoshihiro
NTT Electrical communications Laboratories
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Sato Kuninori
Institute For Fusion Science
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Matsuda Kazuko
Faculty Of Engineering Kanazawa University
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Fuke Hiroyuki
The Authors Are With Toshiba
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Asano Y
Fukui Univ. Technol. Fukui
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Takahashi K
Department Of Physical Electronics Tokyo Institute Of Tecnology
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Hashimoto K
Univ. Tokyo Tokyo Jpn
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Kikuchi A
Department Of Electrical And Electronic Engineering Sophia University
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Kikuchi A
Institute Of Advanced Biomedical Engineering And Science Center Of Excellence (coe) Program For The
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Maeda Y
Deparment Of Information And Control Engineering Toyota Technological Institute
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NOZAKI Shinji
Department of Physical Electronics, Tokyo Institute of Technology
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AKATSUKA Takeshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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YAMANAKA Michinari
ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.
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Hikita M
Ntt Advanced Technol. Corp. Ibaraki Jpn
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Hikita Makoto
Ntt Opto-electronics Laboratory
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Hikita Makoto
Ntt Advanced Technology Corp.
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Hikita Makoto
Ntt Photonics Laboratories
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Sato K
Department Of Electronics And Information Science Teikyo University Of Science And Technology
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Matsuda K
Univ. Cambridge Cambridge Gbr
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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Harada Y
Univ. Tokyo Tokyo Jpn
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Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corp.
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MORIWAKI Masaru
ULSI Process Technology Development Center, Matsushita Electronics Corporation
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YAMADA Takayuki
ULSI Process Technology Development Center, Matsushita Electronics Corporation
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FUJII Shinji
ULSI Process Technology Development Center, Matsushita Electronics Corporation
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Hayakawa Yasuhiro
Research Institute of Electronics, Shizuoka University
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HIDAKA Yoshikazu
NTT Applied Electronics Laboratories
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TAJIMA Yukimichi
NTT Applied Electronics Laboratories
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TOMIYAMA Futoshi
Department of Physics,Faculty of Science,Osaka University
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HIKITA Makoto
Research Center for Extreme Materials,Osaka University
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Hikita Makoto
NTT Opto-Electronics Laboratories
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Tajima Yukimichi
NTT Opto-Electronics Laboratories
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Kikuchi Akihiko
Department Of Obstetrics Center For Perinatal Medicine Nagano Children's Hospital
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Yamada Takuma
Graduate School Of Frontier Science University Of Tokyo
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Yamada Takuma
Graduate School Of Science The University Of Tokyo
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Takase Yuichi
School Of Frontier Sciences University Of Tokyo
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Nagashima Yoshihiko
Graduate School Of Frontier Sciences The Univ. Of Tokyo
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KISHINO Katsumi
Department of Engineering and Applied Sciences, Sophia University
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OGAWA Shinji
Department of Materials Science and Technology, Faculty of Science and Technology, Science Universit
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Nakamura Shinichi
Department of Cardiovascular Medicine, Kumamoto Central Hospital
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Hayakawa Yoshinori
Institute Of Basic Medical Sciences University Of Tsukuba
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YAMADA Takayuki
Department of Pathophysiological Laboratory Sciences, Nagoya University Graduate School of Medicine
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Gong X
Institute Of Semiconductor And Information Technology College Of Electronics And Information Enginee
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YASAKA Hiroshi
NTT Opto-electronics Laboratories
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YAMAYA Kazuhiko
Department of Applied Physics, Hokkaido University
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Mori Yoshihiro
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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YAMAGUCHI Tomuo
Research Institute of Electronics, Shizuoka University
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AOYAMA Mitsuru
Research Institute of Electronics, Shizuoka University
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Ogawa Shinji
Department Of Electrical And Electronic Engineering And Information Engineering Nagoya University
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Yasaka Hiroshi
Ntt Opto-electornics Laboratories
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KUMAGAWA Masashi
Research Institute of Electronics, Shizuoka University
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Saito N
Nagoya Univ. Aichi Jpn
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KASAHARA Hiroshi
Graduate School of Frontier Sciences, The University of Tokyo
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USHIGOME Masayasu
Graduate School of Science, The University of Tokyo
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IIJIMA Daisuke
Graduate School of Frontier Sciences, The University of Tokyo
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KOBORI Yousuke
Graduate School of Frontier Sciences, The University of Tokyo
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NISHI Tomoichirou
Graduate School of Frontier Sciences, The University of Tokyo
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TANIGUCHI Tomokazu
Graduate School of Science, The University of Tokyo
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YAMAGISHI Kenichi
Graduate School of Science, The University of Tokyo
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YAMADA Takuma
School of Science, University of Tokyo
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EJIRI Akira
School of Frontier Sciences, University of Tokyo
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杉村 誠
Shizuoka Univ. Hamamatsu Jpn
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杉村 誠
岐阜大学農学部獣医学科家畜臨床繁殖学研究室:(現)愛知県西尾保健所
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NAKAO Masashi
NTT Opto-electronics Laboratories
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Yamaya K
Hokkaido Univ. Sapporo
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Yamaya Kazuhiko
Department Of Applied Physics Hokkaido University
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Kondo K
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Hayakawa Yasuhiro
Research Institute Of Electronics Shizuoka University
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Hayakawa Yasuhiro
Department Of Chemical Engineering Waseda University
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Matsumoto Kazuhiko
Electrotechnical Laboratory (etl)
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Xiuying GONG
Central Research Laboratory, Hamamatsu Photonics K.K.
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KAN Hiofumi
Central Research Laboratory, Hamamatsu Photonics K.K.
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YAMADA Takahiro
Research Institute of Electronics, Shizuoka University
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SUZUKI Isao
Research Institute of Electronics, Shizuoka University
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SAITO Nobuo
Research Institute of Electronics, Shizuoka University
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Saito Norihito
Solid-state Laser For Astronomical Observation Research Team Riken
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NINOMIYA Hideaki
Department of Neuropsychiatry, Graduate School of Medical Sciences, Kyushu University
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SHIBATA Jun
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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Yamada Takayuki
Department Of Cardiology Kokura Memorial Hospital
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ISHI Takao
NTT Electrical Communications Laboratories
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SUZUKI Naobumi
NTT Electrical Communications Laboratories
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Morita Mitsuru
Department Of Nuclear Engineering Hokkaido University:nippon Steel Corporation.
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Morita Mitsuru
Department Of Analytical Chemistry School Of Pharmaceutical Sciences University Of Shizuoka
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ITOH Junji
Electrotechnical Laboratory
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Tomiyama F
Hitachi Ltd. Tokyo Jpn
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Tomiyama Futoshi
Department Of Physics Faculty Of Science Osaka University
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Tajima Yukimichi
Department Of Nuclear Engineering Hokkaido University
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SHIRAHAMA Masanori
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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FUJIMOTO Isao
Science and Technical Research Laboratories of NHK
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NISHINE Shiro
Sumitomo Electric Industries, Ltd.
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SHIRAKASHI Junichi
Department of Physical Electronics, Tokyo Institute of Technology
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QI Ming
Department of Physical Electronics, Tokyo Institute of Technology
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MIYAKE Ryuji
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Hikita Makoto
Ntt Opto-ekectronics Laboratories
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FUKAMACHI Taichi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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SASAKI Masahiro
Institute of Applied Physics, University of Tsukuba
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MATSUSHITA Tosio
Department of Research and Development, Nichia Chemical Industries, Ltd.
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NAKAMURA Shuji
R & D Department, Nichia Chemical Industries, Ltd.
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SENOH Masayuki
R & D Department, Nichia Chemical Industries, Ltd.
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IWASA Naruhito
R & D Department, Nichia Chemical Industries, Ltd.
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NAGAHAMA Shin-ichi
R & D Department, Nichia Chemical Industries, Ltd.
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YAMADA Takao
R & D Department, Nichia Chemical Industries, Ltd.
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MUKAI Takashi
Engineering Department, Nichia Chemical Industries, Ltd.
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Sasaki Masahiro
Institute Of Applied Physics University Of Tsukuba
著作論文
- Two-Dimensional Weak Localization in Electron High-T_c Superconductor Nd(2-x) Ce_xCuO_y under High Magnetic Field
- Magnetoresistance Measurements of Single-Crystal LnBa_2Cu_3O_y (Ln=Ho,Dy,Eu and Y) under Pulsed High Magnetic Field
- Magnetic and Superconducting Properties of Ba_2HoCu_3O_ under High Magnetic Field : Electrical Properties of Condensed Matter
- Visible Fluctuation Measurements on the TST-2 Spherical Tokamak
- Two-Chord Interferotnetry Using a Pin Switch for Plasma Density Measurement : Nuclear Sciences, Plasmas, and Electric Discharges
- Liquid Phase Epitaxial Growth of High-Quality GaInAsSb/InAs
- Effect of Growth Interruption during GaAs/AlGaAs Molecular Beam Epitaxy on (411)A Substrates
- Flattening Transition 0n GaAs (411)A Surfaces Observed by Scanning Tunneling Microseopy
- Crystal Structure and Superconductivity in Ba_2Y_Pr_xCu_3O_ : Electrical Properties of Condensed Matter
- Superconductivity in Ba_3La_2LuCu_6O_y : Electrical Properties of Condensed Matter
- Preparation and Superconducting Properties of Tetragonal Ba_2YCu_3O_ and Ba_2EuCu_3O_ with Low Oxygen-Defect Concentration (0.05
- Superconductivity in Ba-Ln(lanthanoid)-Cu-O Compounds
- Carbon δ-Doping in GaAs by Metal-Organic Molecular Beam Epitaxy
- Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
- Effect of Heavy Doping on Band Gap and Minority Carrier Transport of AlGaAs/GaAs HBT's (SOLID STATE DEVICES AND MATERIALS 1)
- InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
- Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
- High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
- High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
- InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
- InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
- Synthesis of Superconducting T'-(La_Ce_x)_2CuO_4
- Preparation and Superconducting Properties of La_(Ca_Sr_y)_Cu_2O_
- Crystal Structure of Low Oxygen-Defect Tetragonal Ba_2YCu_3O_
- Crystal Structure and Superconducting Properties of BaPb_Bi_xCu_yO_
- Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AIN Multiple Intermediate Layers
- High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy
- All-Optical Inverter Operating up to 850℃ in an Erbium-Doped Phosphate Glass
- Temperature Dependence of Negative Nonlinear Absorption Effect in an Erbium-doped Borate Glass
- 50 nm Pattern Etching of Si Wafer by Synchrotron Radiation Excited CF_4 Plasma
- Electrical Properties of Al/Al_2O_3/(Ba,Rb)BiO_3/SrTiO_3(Nb) Three Terminal Device
- Sub-100nm Lithography with Using Pulsed Plasma Graft-polymerized Styrene and E-Beam Excited Plasma
- Electrical Properties of Al/Al_2O_3/(Ba,Rb)BiO_3/SrTiO_3(Nb) Three Terminal Device
- Measurement of Surface Fermi Level in Phosphidized GaAs
- Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAsP
- High-Performance 1.5-μm Distributed Feed Back Lasers with Strained Multi-Quantum Well Structure Grown by Metalorganic Molecular Beam Epitaxy (Chemical Beam Epitaxy)
- Low-Threshold InGaAs/ InGaAsP Multiple Quantum Well Lasers Grown by Chemical Beam Epitaxy
- Selective Area Growth of InP and InGaAs Layers on SiO_2-Masked Substrate by Chemical Beam Epitaxy
- In_Ga_As/InP Mutiquantum Well Lasers Grown by Metalorganic Molecular beam Epitaxy (MOMBE)
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs
- Effect of Surface Phosphidization on GaAs Schottky Barrier Junctions
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InP
- Ion Irradiation Effect on the Microscopic Potential Distribution of MgO Surface
- Unusual Voltage-Current Characteristic in the Superconducting Transition Region in TaSe_3
- Laser-Assisted MOMBE Growth of GaAs Using Tri-Isobutyl Gallium