Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InP
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-03-20
著者
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Yamada T
Tokyo Inst. Of Technol. Tokyo Jpn
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Yamada T
Tokyo Inst. Technol. Tokyo Jpn
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Yamada T
Daido Inst. Technol. Nagoya Jpn
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Yamada T
Sophia Univ. Tokyo Jpn
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Yamada T
Tokai Univ. Hiratsuka Jpn
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YAMADA Takeshi
NTT Opto-electronics Laboratories
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IGA Ryuzo
NTT Opto-electronics Laboratories
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SUGIURA Hideo
NTT Opto-electronics Laboratories
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Sugiura H
Ntt Opti‐electronics Lab. Kanagawa‐ken Jpn
関連論文
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- Magnetoresistance Measurements of Single-Crystal LnBa_2Cu_3O_y (Ln=Ho,Dy,Eu and Y) under Pulsed High Magnetic Field
- Magnetic and Superconducting Properties of Ba_2HoCu_3O_ under High Magnetic Field : Electrical Properties of Condensed Matter
- Visible Fluctuation Measurements on the TST-2 Spherical Tokamak
- Two-Chord Interferotnetry Using a Pin Switch for Plasma Density Measurement : Nuclear Sciences, Plasmas, and Electric Discharges
- Liquid Phase Epitaxial Growth of High-Quality GaInAsSb/InAs
- Effect of Growth Interruption during GaAs/AlGaAs Molecular Beam Epitaxy on (411)A Substrates
- Flattening Transition 0n GaAs (411)A Surfaces Observed by Scanning Tunneling Microseopy
- Crystal Structure and Superconductivity in Ba_2Y_Pr_xCu_3O_ : Electrical Properties of Condensed Matter
- Superconductivity in Ba_3La_2LuCu_6O_y : Electrical Properties of Condensed Matter
- Preparation and Superconducting Properties of Tetragonal Ba_2YCu_3O_ and Ba_2EuCu_3O_ with Low Oxygen-Defect Concentration (0.05
- Superconductivity in Ba-Ln(lanthanoid)-Cu-O Compounds
- Carbon δ-Doping in GaAs by Metal-Organic Molecular Beam Epitaxy
- Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown by MOMBE
- Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
- Effect of Heavy Doping on Band Gap and Minority Carrier Transport of AlGaAs/GaAs HBT's (SOLID STATE DEVICES AND MATERIALS 1)
- InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
- Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
- High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
- High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
- InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
- InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
- Synthesis of Superconducting T'-(La_Ce_x)_2CuO_4
- Preparation and Superconducting Properties of La_(Ca_Sr_y)_Cu_2O_
- Crystal Structure of Low Oxygen-Defect Tetragonal Ba_2YCu_3O_
- Crystal Structure and Superconducting Properties of BaPb_Bi_xCu_yO_
- Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AIN Multiple Intermediate Layers
- High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy
- All-Optical Inverter Operating up to 850℃ in an Erbium-Doped Phosphate Glass
- Temperature Dependence of Negative Nonlinear Absorption Effect in an Erbium-doped Borate Glass
- 50 nm Pattern Etching of Si Wafer by Synchrotron Radiation Excited CF_4 Plasma
- Electrical Properties of Al/Al_2O_3/(Ba,Rb)BiO_3/SrTiO_3(Nb) Three Terminal Device
- Sub-100nm Lithography with Using Pulsed Plasma Graft-polymerized Styrene and E-Beam Excited Plasma
- Electrical Properties of Al/Al_2O_3/(Ba,Rb)BiO_3/SrTiO_3(Nb) Three Terminal Device
- Measurement of Surface Fermi Level in Phosphidized GaAs
- Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps
- Laser-Diode-Quality InP/Si Grown by Hydride Vapor Phase Epitaxy
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAsP
- High-Performance 1.5-μm Distributed Feed Back Lasers with Strained Multi-Quantum Well Structure Grown by Metalorganic Molecular Beam Epitaxy (Chemical Beam Epitaxy)
- Low-Threshold InGaAs/ InGaAsP Multiple Quantum Well Lasers Grown by Chemical Beam Epitaxy
- Selective Area Growth of InP and InGaAs Layers on SiO_2-Masked Substrate by Chemical Beam Epitaxy
- In_Ga_As/InP Mutiquantum Well Lasers Grown by Metalorganic Molecular beam Epitaxy (MOMBE)
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs
- Effect of Surface Phosphidization on GaAs Schottky Barrier Junctions
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InP
- Mechanism of GaAs Selective Growth in Ar^+ Laser-Assited Metalorganic Molecular Beam Epitaxy
- Ion Irradiation Effect on the Microscopic Potential Distribution of MgO Surface
- Unusual Voltage-Current Characteristic in the Superconducting Transition Region in TaSe_3
- Reversal of Zeeman Splitting in InGaAs/InP Quantum Wires in High Magnetic Field
- Fault-Tolerant Graphs for Hypercubes and Tori (Special Issue on Architectures, Algorithms and Networks for Massively parallel Computing)
- Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InP
- Increased Saturation Intensity and High-Input-Power Allowable InGaAs/InAlAs MQW Modulators Buried in Semi-Insulating InP
- A Novel Graphical Analysis Method for Double Crystal X-Ray Diffraction Measurements of Strained Layer Superlattices Grown on (100) Substrate
- A Note on the Circuit-switched Fixed Routing in Networks (特集 並列処理)
- Laser-Assisted MOMBE Growth of GaAs Using Tri-Isobutyl Gallium
- Quantum Wire Fabrication by E-Beam Elithography Using High-Resolution and High-Sensitivity E-Beam Resist ZEP-520
- Observation of Transient Behavior of GaAs MBE Growth by RHEED Oscillation
- Molecular Beam Epitaxial Growth of GaAs with Arsenic Molecules Transported by Hydrogen Gas
- Simultaneous Observation of RHEED Oscillation during GaAs MBE Growth with Modulated Electron Beam
- Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InP