Increased Saturation Intensity and High-Input-Power Allowable InGaAs/InAlAs MQW Modulators Buried in Semi-Insulating InP
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概要
- 論文の詳細を見る
- 1997-09-16
著者
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KOTAKA Isamu
NTT Electronics, Corporation
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KOTAKA Isamu
NTT Opto-electronics Laboratories
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Wakita Koichi
NTT Opto-electronics Laboratories
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KONDO Susumu
NTT Opto-electronics Laboratories
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NOGUCHI Yoshio
NTT Opto-electronics Laboratories
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Kondo S
Olympus Optical Co. Ltd. Hachioji‐shi Jpn
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Kotaka Isamu
Ntt Electronics Corporation
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Wakita K
Chubu Univ. Aichi Jpn
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Nakano Yoshinori
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Cororation
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Wakita Koichi
With Ntt Opto-electronics Laboratories:chubu University
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Noguchi Y
Tohoku Univ. Sendai Jpn
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IGA Ryuzo
NTT Opto-electronics Laboratories
関連論文
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- Spot-size Converter Integrated Laser Diodes (SS-LDs) (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- Short Optical Pulse Generation and Modulation by a Multi-Section MQW Modulator/DFB Laser Integrated Light Source
- Very-High-Speed and Low Driving-Voltage Modulator Modules for a Short Optical Pulse Generation
- On the Field-induced Refractive Index Change Considering Valence Band Nornparabolicity in Quantum Well Structures
- Resonant Tunneling Characteristic in InGaAs/InAlAs MQW Diodes with Si-Doped Quantum Wells
- High Purity Liquid Phase Epitaxial Growth of InP
- Ultrahigh Purity Liquid Phase Epitaxial Growth of GaAs
- Effective Techniques for Ultra-High Purity Liquid Phase Epitaxial Growth of Ga_In_As
- Effect of the Grating Phase at the Cleaved Facet on DFB Laser Properties
- Mode Behavior Improvement in DFB LDs by Light Phase Control at the Facet
- InP/InGaAsP 1.5μm Region Etching Cavity Laser
- Prevention of Surface Corrugation Thermal Deformation for InGaAsP/InP DFB Lasers
- InGaAsP/InP Dual-Wavelength BH Laser
- Abnormality at the Interface of p-Type InP Grown by LPE
- 1.5 μm Region BH Laser Array
- Low Threshold Current CW Operation of InP/GaInAs Buried Heterostrueture Lasers
- 1.5μm InGaAsP/InP BH Lasers on p-Type InP Substrates
- InP/GaInAsP Buried Heterostructure Lasers of 1.5 μm Region
- Electrical Evaluation of Sidewall Damage Caused by CH_4/H_2 Reactive Ion Etching
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAsP
- High-Performance 1.5-μm Distributed Feed Back Lasers with Strained Multi-Quantum Well Structure Grown by Metalorganic Molecular Beam Epitaxy (Chemical Beam Epitaxy)
- Low-Threshold InGaAs/ InGaAsP Multiple Quantum Well Lasers Grown by Chemical Beam Epitaxy
- Selective Area Growth of InP and InGaAs Layers on SiO_2-Masked Substrate by Chemical Beam Epitaxy
- In_Ga_As/InP Mutiquantum Well Lasers Grown by Metalorganic Molecular beam Epitaxy (MOMBE)
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InP
- Mechanism of GaAs Selective Growth in Ar^+ Laser-Assited Metalorganic Molecular Beam Epitaxy
- Observation of Low Chirp Modulation in Long Wavelength InGaAs/InAlAs Multiple-Quantum-Well Optical Modulators
- Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InP
- Increased Saturation Intensity and High-Input-Power Allowable InGaAs/InAlAs MQW Modulators Buried in Semi-Insulating InP
- Observation of Room Temperature Current Oscillation in InGaAs/InAlAs MQW Pin Diodes
- Degradation of (GaAl)As-GaAs DH Lasers in Water due to Facet Deterioration
- Current Oscillation Related to N=3 Subband Levels up to Room Temperature in InGaAs/InAlAs MQW Diodes
- A New Photochemical Selective Silylation Technique for Resist Materials
- Laser-Assisted MOMBE Growth of GaAs Using Tri-Isobutyl Gallium
- Quantum Wire Fabrication by E-Beam Elithography Using High-Resolution and High-Sensitivity E-Beam Resist ZEP-520
- Coupling Efficierucies between Laser Diodes and Photo Diodes of InGaAsP/InP LD-PD Devices with Inclined PD Facets Considering PD Absorption
- New Silylation Bi-layer Resist System Employing Photochemical Selective Resist Silylation
- A Reflection-Type Surface-Emitting 1.3 μm InGaAsP/InP Laser Array with Microcoated Reflector
- Simultaneous Time- and Wavelength-Division Optical Digital Processing with a InP Buried Side-Injection-Light-Controlled Bistable Laser Diode
- Large Quantum-Confined Stark-Effect in Quaternary InGaAlAs Quantum Wells
- Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InP
- InGaAsP/InP Etched Mirror Lasers Fabricated by Inclined RIE