Current Oscillation Related to N=3 Subband Levels up to Room Temperature in InGaAs/InAlAs MQW Diodes
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概要
- 論文の詳細を見る
A clear current oscillation related to the n=3 subband levels was observed up to room-temperature in the forward I-V characteristic of the InGaAs/InAlAs MQW diodes, as well as a current oscillation related to the n=2 subband levels. A significant hysteresis characteristic was also observed for the current oscillation related to the n=3 subband levels at 77K. The energy difference between the n=1 and n=2 subband levels estimated from the I-V characteristic agrees with that obtained from the absorption spectrum.
- 社団法人応用物理学会の論文
- 1987-10-20
著者
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OE Kunishige
NTT Opto-electronics Laboratories
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Oe Kunishige
Ntt Opto Electronics Laboratories:(present Address)kyoto Institute Of Technology
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Wakita Koichi
NTT Opto-electronics Laboratories
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KAWAMURA Yuichi
NTT Opto-electronics Laboratories
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KAWAMURA Yuichi
NTT Optc-electronics Laboratories
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