New Silylation Bi-layer Resist System Employing Photochemical Selective Resist Silylation
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概要
- 論文の詳細を見る
This paper describes a new silylation bi-layer resist system (SIBIS) that employs our previously reported photo-chemical selective silylation technique. Several different types of SIBIS are presented: normal-transfer SIBIS, image-reversal SIBIS, two-way normal-transfer/image-reversal SIBIS using the same resist materials, dry-development SIBIS and SIBIS that uses an antireflective undercoating as a bottom layer. These SIBISs are applicable to optical, e-beam, and X-ray lithographies with proper selection of top-layer resist materials. This investigation primarily focuses on the top- and bottom-layer materials and silylation process conditions. Each of the SIBIS processes demonstrate fine pattern fabrication capability. The usefulness and superiority of SIBIS for LSI fabrication is confirmed.
- 社団法人応用物理学会の論文
- 1994-06-15
著者
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KOTAKA Isamu
NTT Opto-electronics Laboratories
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Mimura Yoshiaki
NTT LSI Laboratories
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Mimura Y
Ntt Lsi Lab. Kanagawa Jpn
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