A New Photochemical Selective Silylation Technique for Resist Materials

概要

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A new selective photochemlcal silylation technique for resist materials has been developed. When deep-UV light is irradiated on resist films in either the vapor- or liquid-phase of monochloroalkylsilanes, many commercially available resist materials, both those that have phenolic hydroxy groups like DNQ/novolak and those that do not like polymethylmethacrylate (PMMA), can be sufficiently silylated. The silylated resist layer shows marked improvement in its durability against O_2 dry etching. The silylation mechanism is presumed to be that alkylsilane radicals are firstly generated by deep-UV light irradiation, then the radicals diffuse into the resist film and chemically incorporate with the functional base radicals of the resist that are also generated by deep-UV light irradiation. The mechanism is clearly different from conventional one where the diffusion of the silylating agent is carried out after the UV-light irradiation.
社団法人応用物理学会の論文
1994-05-15