A Silicon Oxide Antireflective Layer For Optical Lithography Using Electron Cyclotron Resonance Plasma Deposition

概要

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Using electron cyclotron resonance plasma deposition, we have developed an SiO_x film as an antireflective layer (ARL) for the gate process of LSI fabrication by i-line and KrF lithography. The ARL is an absorption type and is 100 nm thick. The estimated optimum optical properties of the ARL for i-line were n = 2.3-2.6 and k = 0.5-0.6, For KrF, they were n = 1.8-2.1 and k = 0.5-0.6. An SiO_x film having these properties can be reproducibly deposited at SiH_4/O_2 gas flow rate ratio of 1.3 for i-line and 1.1 for KrF. The chemical compositions of the films are SiO_<0.5> for i-line and SiO_<1.0> for KrF. The SiO_<0.5> film was used as an i-line ARL for 0.35-μpm LSI gate fabrication and superior process performance and sufficient critical dimension controllability (variation within 19 urn of 3σ) were obtained.
社団法人応用物理学会の論文
1996-05-15