Observation of Low Chirp Modulation in Long Wavelength InGaAs/InAlAs Multiple-Quantum-Well Optical Modulators

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1987-10-20

著者

• NAKAO Masashi

  NTT Opto-electronics Laboratories

• Wakita Koichi

  NTT Opto-electronics Laboratories

• KAWAMURA Yuichi

  NTT Opto-electronics Laboratories

• Kawamura Y

  Ntt Opto-electronics Laboratories

• Kawamura Y

  Research Institute For Advanced Science And Technology Osaka Prefecture University

• Kawamura Y

  Fuji Electric Corporate Res. And Dev. Ltd. Kanagawa Jpn

• YOSHIKUNI Yuzo

  NTT Opto-electronics Laboratories

• Asahi H

  Osaka Univ. Osaka Jpn

• Wakita K

  Chubu Univ. Aichi Jpn

• Wakita Koichi

  With Ntt Opto-electronics Laboratories:chubu University

• Kawamura Yuichi

  Department Of Physics School Of Science And Engineering Waseda University:(present Adderss) Musashin

• ASAHI Hajime

  NTT Opto-electronics Laboratories

• KAWAMURA Yuichi

  NTT Optc-electronics Laboratories

関連論文

• Spot-size Converter Integrated Laser Diodes (SS-LDs) (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
• Short Optical Pulse Generation and Modulation by a Multi-Section MQW Modulator/DFB Laser Integrated Light Source
• Very-High-Speed and Low Driving-Voltage Modulator Modules for a Short Optical Pulse Generation
• CuAu-Type Ordering Self-formed by Growing GaP/InP Short-Period Superlattices on GaAs (011) Substrate
• Straight Quantum Wires Self-Formed by Growing GaP/InP Short-Period Superlattices on GaAs(011) Substrate
• Improved Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
• Scanning Tunneling Microscopy Study on Self-Formation Process of Quantum Dot Structures by the Growth of GaP/InP Short-Period Superlattices on GaAs(311)A Substrate
• Vertical Quantum Confinement Effect on Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
• Scanning Tunneling Microscopy/Spectroscopy Study of Self-Organized Quantum Dot Structures Formed in GaP/InP Short-Period Superlattices ( Scanning Tunneling Microscopy)
• Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
• Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in (GaP)_n(InP)_n Superlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy
• Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy Observation of III-V Compound Semicomductor Nanostructures
• Substrate Orientation Dependence of Optical Properties of GaP/AlP Short-Period Superlattices
• Photoluminescence Wavelength Dependence on Layer Structure of GaP/AlP Modulated Superlattices
• Operation Characteristics of a Side-Light-Injection Multiple-Quantum-Well Bistable Laser for All-Optical Switching
• Improvement of Optical Properties of Multilayer Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices on GaAs(311)A
• Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice
• Growth Temperature Dependence of Self-Formation Process of Quantum Dot Structures in GaP/InP Short-Period Superlattices Grown on GaAs (311)A Substrate
• Possibility for the Discrimination of Submonolayer InAs and GaAs Grown on Tilted GaAs Substrate
• On the Field-induced Refractive Index Change Considering Valence Band Nornparabolicity in Quantum Well Structures
• Synchrotron Radiation Lithography for DFB Laser Gratings : Lithography Technology
• GaAs and InP Nanohole Arrays Fabricated by Reactive Beam Etching Using Highly Ordered Alumina Membranes
• Polarization Independent Semiconductor Arrayed Waveguide Gratings Using a Deep-Ridge Waveguide Structure(Special Issue on High-Capacity WDM/TDM Networks)
• Resonant Tunneling Characteristic in InGaAs/InAlAs MQW Diodes with Si-Doped Quantum Wells
• Compositional Disordering of In_Ga_As/In_Al_As Multiquantum Well Structures by Repetitive Rapid Thermal Annealing
• Si-Induced Disordering of In_Ga_As / In_Al_As Multiquantum Well Structures : Semiconductors and Semiconductor Devices
• Magnetic Quantum Oscillations in In_Ga_As/In_Al_As Multiquantum Well Observed by Millimeter Wave Responce
• Transport Properties in InP/InAlAs Type II Single Heterostructure
• TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy
• Improved Growth Kinetic Model for Metalorganic Molecular Beam Epitaxy Using Triethylgallium
• Selective Area Epitaxy of GaSb by Metal-Organic Molecular Beam Epitaxy
• Measurement of the Energy Spread of the Cold Relativistic Electron Beam Using Thomson Backscattering of a High Power CO_2 Laser
• Direct Measurement of the Energy Distribution of an Intense Relativistic Electron Beam
• Properties of In_Al_AS and In_Ga_AS/In_Al_AS Quantum Well Structures Grown on (111)B InP Substrates by Molecular Beam Epitaxy
• Non-Destructive Characterization of InGaAsP/InP Distributed Bragg Reflectors and Regrown Optical Cavity Layers for InP-Based Vertical-Cavity Surface-Emitting Lasers
• Spectral Linewidth and Linewidth Enhancement Factor in 1.5-μm Modulation-Doped Strained Multiple-Quantum-Well Lasers
• Multiple-Phase-Shift Super Structure Grating DBR Lasers
• Molecular Beam Epitaxial Growth of Undoped Low-Resistivity In_xGa_P on GaAs at High Substrate Temperatures (500-580℃)
• Optical Properties of an InGaAlAs/InP Type-II Superlattice
• Type I/Type II Transition in InGaAlAs/InP Multiple Quantum Well Structures Grown by Gas Source Molecular Beam Epitaxy
• Electroabsorption in an AlInAs/InP Type II Superlattice
• Negative Differential Conductivity of Photoconducting KTaO_3
• Ideally Ordered Metal Hole Arrays with High Aspect Ratios Prepared from Anodic Porous Alumina
• High-Performance 1.5-μm Distributed Feed Back Lasers with Strained Multi-Quantum Well Structure Grown by Metalorganic Molecular Beam Epitaxy (Chemical Beam Epitaxy)
• 1.3-1.6-μm-Wavelength Quantum Dots Self-Formed in GaAs/InAs Short-Period Superlattices Grown on InP (411)A Substrates : Semiconductors
• High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns
• Photonic Band Gap in Anodic Porous Alumina with Extremely High Aspect Ratio Formed in Phosphoric Acid Solution
• Observation of Low Chirp Modulation in Long Wavelength InGaAs/InAlAs Multiple-Quantum-Well Optical Modulators
• Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InP
• Increased Saturation Intensity and High-Input-Power Allowable InGaAs/InAlAs MQW Modulators Buried in Semi-Insulating InP
• Temperature-Stable Wavelength TlInGaAs/InP Double Heterostructure Light-Emitting Diodes Grown by Gas Source Molecular Beam Epitaxy
• Gas Source Molecular Beam Epitaxy Growth of TlInGaAs Layers on GaAs Substrates
• Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy
• GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy
• Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates
• Gas Source Molecular Beam Epitaxial Growth of GaN_P_x (x ≦ 0.015) Using Ion-Removed Electron Cyclotron Resonance Radical Cell
• Observation of Room Temperature Current Oscillation in InGaAs/InAlAs MQW Pin Diodes
• Degradation of (GaAl)As-GaAs DH Lasers in Water due to Facet Deterioration
• Current Oscillation Related to N=3 Subband Levels up to Room Temperature in InGaAs/InAlAs MQW Diodes
• New III-V Compound Semiconductors TlInGaP for 0.9 μm to over 10 μm Wavelength Range Laser Diodes and Their First Successful Growth
• Effects of PN-Junction on Negative Differential Resistance of InGaAs/InAlAs Multiple Quantum Well Resonant Tunneling Diodes
• InAlAs/AlAsSb Type II Multiple Quantum Well Layers Lattice-Matched to InP Grown by Molecular Beam Epitaxy
• Electric Properties of Pb(Sb_Nb_)O_3-PbTiO_3-PbZrO_3 Ceramics Modified with Certain Additives
• High Frequency Characteristics of InAlAs/InGaAs HBT's
• Synthesis of Diamond Cylinders with Triangular and Square Cross Sections Using Anodic Porous Alumina Templates
• Ideally Ordered Anodic Porous Alumina Mask Prepared by Imprinting of Vacuum-Evaporated Al on Si : Instrumentation, Measurement, and Fabrication Technology
• InP/InAlAs Resonant Tunneling Diodes Grown by Gas Source Molecular Beam Epitaxy
• Application of Atomic Force Microseopy to the Study of Size Fluetuation in E-Beam Patterned Quantum Wire Structures
• In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic
• Non-Destructive Characterization of InGaAsP/InP Distributed Bragg Reflectors and Regrown Optical Cavity Layers for InP-Based Vertical-Cavity Surface-Emitting Lasers
• Large Quantum-Confined Stark-Effect in Quaternary InGaAlAs Quantum Wells
• Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InP
• Synchrotron Radiation Lithography for DFB Laser Gratings

もっと見る 閉じる

スポンサーリンク