InGaAsP/InP Dual-Wavelength BH Laser
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-03-05
著者
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NOGUCHI Yoshio
NTT Opto-electronics Laboratories
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Nakano Yoshinori
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Cororation
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Noguchi Y
Tohoku Univ. Sendai Jpn
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Nagai Haruo
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Cororation
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Nagai Haruo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephon Public Corporation
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NOGUCHI Yoshio
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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SUZUKI Yoshio
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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TAKAHEI Ken-ichiro
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Nagai Haruo
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Takahei Ken-ichiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Noguchi Yoshio
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Suzuki Yoshio
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Cororation
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NAGAI Haruo
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
関連論文
- Very-High-Speed and Low Driving-Voltage Modulator Modules for a Short Optical Pulse Generation
- Gas Source MBE Growth of High-Quality InP Using Triethylindium and Phosphine
- MBE Growth of High-Quality InP Using Triethylindium as an Indium Source
- Effect of the Grating Phase at the Cleaved Facet on DFB Laser Properties
- Influence of Ambient Gas on the PL intensity from InP and GaAs : B-5: LASERS (2)
- Molecular Beam Epitaxial Growth of Undoped Low-Resistivity In_xGa_P on GaAs at High Substrate Temperatures (500-580℃)
- Mode Behavior Improvement in DFB LDs by Light Phase Control at the Facet
- InP/InGaAsP 1.5μm Region Etching Cavity Laser
- Prevention of Surface Corrugation Thermal Deformation for InGaAsP/InP DFB Lasers
- InGaAsP/InP Dual-Wavelength BH Laser
- Abnormality at the Interface of p-Type InP Grown by LPE
- 1.5 μm Region BH Laser Array
- Low Threshold Current CW Operation of InP/GaInAs Buried Heterostrueture Lasers
- 1.5μm InGaAsP/InP BH Lasers on p-Type InP Substrates
- InP/GaInAsP Buried Heterostructure Lasers of 1.5 μm Region
- Electrical Evaluation of Sidewall Damage Caused by CH_4/H_2 Reactive Ion Etching
- Low-Threshold InGaAs/ InGaAsP Multiple Quantum Well Lasers Grown by Chemical Beam Epitaxy
- In_Ga_As/InP Mutiquantum Well Lasers Grown by Metalorganic Molecular beam Epitaxy (MOMBE)
- Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InP
- Increased Saturation Intensity and High-Input-Power Allowable InGaAs/InAlAs MQW Modulators Buried in Semi-Insulating InP
- Effect of Baking Temperature on Purity of LPE Ga_In_As
- Coupling Efficierucies between Laser Diodes and Photo Diodes of InGaAsP/InP LD-PD Devices with Inclined PD Facets Considering PD Absorption
- Instability of In-Ga-As-P Liquid Solution during Low Temperature LPE of In_Ga_xAs_P_y on InP
- A Reflection-Type Surface-Emitting 1.3 μm InGaAsP/InP Laser Array with Microcoated Reflector
- Dislocation Velocities in Indium Phosphide
- Simultaneous Time- and Wavelength-Division Optical Digital Processing with a InP Buried Side-Injection-Light-Controlled Bistable Laser Diode
- Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InP
- InGaAsP/InP Etched Mirror Lasers Fabricated by Inclined RIE