Molecular Beam Epitaxial Growth of Undoped Low-Resistivity In_xGa_<1-x>P on GaAs at High Substrate Temperatures (500-580℃)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-11-05
著者
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Nagai Hisashi
Department Of Electrical Engineering Nagoya University
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Nagai H
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
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Kawamura Y
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Kawamura Yuichi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kawamura Yuichi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corpolation
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Nagai Haruo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephon Public Corporation
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Nagai Haruo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corpolation
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Kawamura Yuichi
Department Of Physics School Of Science And Engineering Waseda University:(present Adderss) Musashin
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ASAI Hajime
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corpolation
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Asai Hajime
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corpolation
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