Properties of Molecular Beam Epitaxial In_xGa_<1-x>As (X≈0.53) Layers Grown on InP Substrates
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概要
- 論文の詳細を見る
In_xGa_<1-x>As (x≈0.53) epitaxial layers are grown on the (100) surface of InP substrates by molecular beam epitaxy. By regulating the relative ratio of the In and Ga molecular beam intensities, lattice-matched In_<0.53>Ga_<0.47>As epilayers are reproducibly grown on InP substrates. The undoped epilayer is n-type, with a carrier concentration of 3×10^<16>cm^<-3> and an electron mobility of 6000 cm^2/V・s at room temperature. Its photoluminescent emission spectrum has a full width at half maximum of 1070 A at room temperature. X-ray and scanning Auger analyses are also presented, along with preliminary doping studies. These results show that the quality of the epilayers obtained here is comparable to that of In_xGa_<1-x>As epilayers grown by liquid phase epitaxy.
- 社団法人応用物理学会の論文
- 1979-03-05
著者
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OKAMOTO Hiroshi
Musashino Electrical Communication Laboratory,NTT
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Kawamura Yuichi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kawamura Yuichi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corpolation
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Asahi Hajime
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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IKEDA Mutsuo
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Ikeda Mutsuo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Okamoto Hiroshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Okamoto Hiroshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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