Room Temperature Operation of 650 nm AlGaAs Multi-Quantum-Well Laser Diode Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-02-20
著者
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OKAMOTO Hiroshi
Musashino Electrical Communication Laboratory,NTT
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IWAMURA Hidetoshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation
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SAKU Tadashi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation
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Iwamura Hidetoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Hirayama Y
Ntt Corp. Kanagawa Jpn
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Hirayama Yoshiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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SUZUKI Yoshifumi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Suzuki Yoshifumi
Musashino Electrical Communication Laboratory Nippon Telegragh And Telephone Public Corporation
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Okamoto Hiroshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Okamoto Hiroshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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SAKU Tadashi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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IWAMURA Hidetoshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
関連論文
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- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
- Room Temperature Operation of Al_Ga_Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
- A Segmented Electrode Multi-Quantum-Well Laser Diode
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
- Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides
- Electron and Hole Proximity Effects in the InAs/AlSb/GaSb System
- Optically Detected Cyclotron Resonance by Multichannel Spectroscopy
- Properties of GaAs/Al_Ga_As Avalanche Photodiode with Superlattice Fabricated by Molecular Beam Epitaxy
- Optical Properties of Dynamically-Modulated Dots and Wires Formed by Surface Acoustic Waves
- Application of InAs Freestanding Membranes to Electromechanical Systems
- Application of InAs Free-Standing Membranes for Electromechanical Systems
- Back-Gated Point Contact
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- Quantum Point Contacts in a Density-Tunable Two-Dimensional Electron Gas
- Spontaneous Emission Characteristics of Quantum Well Lasers in Strong Magnetic Fields : An Approach to Quantum-Well-Box Light Source
- Electrical Pump and Probe Measurements of a Quantum Dot in the Coulomb Blockade Regime
- Transport Properties of Modulation-Doped Structures Grown by Molecular Beam Epitaxy after Focused Ion Beam Implantation
- High Electron Mobility in AlGaAs/GaAs Modulation-Doped Structures
- Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties
- Effect of Structure on Transport Characteristics of Ballistic One-Dimensional Channel
- Defects in Ga^+ Jon Implanted GaAs-AlAs MQW Structures
- Near Room Temperature CW Operation of 660 nun Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy
- Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs Superlattices
- Comparison between GaAs and Al_xGa_As Quantum Wells in the Light Emission Limit
- Room Temperature Operation of 650 nm AlGaAs Multi-Quantum-Well Laser Diode Grown by Molecular Beam Epitaxy
- Si and Sn Doping in Al_xGa_As Grown by MBE
- Resistance Oscillations by Electron-Nuclear Spin Coupling in Microscopic Quantum Hall Devices
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- Near Room Temperature CW Operation at 1.70 μm of MBE Grown InGaAs/InP DH Lasers
- Properties of Molecular Beam Epitaxial In_xGa_As (X≈0.53) Layers Grown on InP Substrates
- Doubly Enhanced Skyrmions in v=2 Bilayer Quantum Hall States : Condensed Matter: Electronic Properties, etc.
- n^+-GaAs Back-Gated Double-Quantum-Well Structures with Full Density Control
- Excitonic Absorption Spectra of GaAs-AlAs Superlattice at High Temperature
- AlSb-GaSb and AlAs-GaAs Monolayer Superlattices Grown by Molecular Beam Epitaxy
- Surface Defects on MBE-Grown GaAs
- Direct Observation of Lattice Arrangement in MBE Grown GaAs-AlGaAs Superlattices
- Some Design Considerations for Multi-Quantum-Well Lasers
- Optical Absorption of GaAs-AlGaAs Superlattice under Electric Field
- Interdiffusion of Al and Ga in Si-Implanted GaAs-AlAs Superlattices
- Photoluminescence of an AlAs/GaAs Superlattice Grown by MBE in the 0.7-0.8 μm Wavelength Region