Okamoto Hiroshi | Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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概要
- 同名の論文著者
- Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporationの論文著者
関連著者
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OKAMOTO Hiroshi
Musashino Electrical Communication Laboratory,NTT
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Okamoto Hiroshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Okamoto Hiroshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Kawamura Yuichi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kawamura Yuichi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corpolation
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Asahi Hajime
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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IKEDA Mutsuo
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Ikeda Mutsuo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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IWAMURA Hidetoshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation
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SAKU Tadashi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation
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Iwamura Hidetoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Hirayama Y
Ntt Corp. Kanagawa Jpn
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Hirayama Yoshiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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SUZUKI Yoshifumi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Suzuki Yoshifumi
Musashino Electrical Communication Laboratory Nippon Telegragh And Telephone Public Corporation
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SAKU Tadashi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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IWAMURA Hidetoshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
著作論文
- Room Temperature Operation of 650 nm AlGaAs Multi-Quantum-Well Laser Diode Grown by Molecular Beam Epitaxy
- Near Room Temperature CW Operation at 1.70 μm of MBE Grown InGaAs/InP DH Lasers
- Properties of Molecular Beam Epitaxial In_xGa_As (X≈0.53) Layers Grown on InP Substrates