Near Room Temperature CW Operation at 1.70 μm of MBE Grown InGaAs/InP DH Lasers
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概要
- 論文の詳細を見る
CW operation of InGaAs/InP DH lasers grown by molecular beam epitaxy has been achieved at a heat sink temperature of 6℃ at a wavelength of 1.70 μm. This result was achieved by growing DH wafers by using Mn as a p-type dopant source and annealing them at 700℃ for one hour. Mn-doping enabled formation of p-type InP epilayers with room temperature hole concentrations as high as 1 × 10^<18> cm^<-3>.
- 社団法人応用物理学会の論文
- 1981-03-05
著者
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OKAMOTO Hiroshi
Musashino Electrical Communication Laboratory,NTT
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Kawamura Yuichi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kawamura Yuichi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corpolation
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Asahi Hajime
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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IKEDA Mutsuo
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Ikeda Mutsuo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Okamoto Hiroshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Okamoto Hiroshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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