AlSb-GaSb and AlAs-GaAs Monolayer Superlattices Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
In this paper we report the synthesis and properties of AlSb-GaSb and AlAs-GaAs monolayer superlattices grown by molecular beam epitaxy. The ordering in the monolayer superlattices is confirmed by an X-ray diffraction technique. The photoluminescence intensity from monolayer superlattice is stronger than that from mixed crystals with the same Al molar odicity in structure of ML-SL is confirmed by X-ray
- 社団法人応用物理学会の論文
- 1984-07-20
著者
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OKAMOTO Hiroshi
Musashino Electrical Communication Laboratory,NTT
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OHMORI Yutaka
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Ohmori Yutaka
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Hirayama Yoshiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Okamoto Hiroshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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