Photoluminescence of an AlAs/GaAs Superlattice Grown by MBE in the 0.7-0.8 μm Wavelength Region
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概要
- 論文の詳細を見る
AlAs/GaAs superlattices were grown by molecular beam epitaxy with a GaAs quantum well width L_Z of 20-160 Å. An X-ray diffraction technique is shown to be a practical and nondestructive method to measure L_Z with in an accuracy of l0%. A photoluminescence measurement showed a sharply peaked structure (?E≦50 meV) and indicated that the main carrierr recombination process at room temperature is from the n=1 electron quantum level to the n=1 heavy hole level. Carrier concentration dependence of the photoluminescence energy differs from the usual Burstein-Moss shift. The highest emission energy obtained was 1.77 eV (7000 Å).
- 社団法人応用物理学会の論文
- 1981-09-05
著者
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Ishibashi Tadao
Musashino Electrical Communication Laboratory Nippon Telegragh And Telephone Public Corporation
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Suzuki Yoshifumi
Musashino Electrical Communication Laboratory Nippon Telegragh And Telephone Public Corporation
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Okamoto Hiroshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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OKAMOTO Hiroshi
Musashino Electrical Communication Laboratory, Nippon Telegragh and Telephone Public Corporation
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SUZUKI Yoshifumi
Musashino Electrical Communication Laboratory, Nippon Telegragh and Telephone Public Corporation
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ISHIBASHI Tadao
Musashino Electrical Communication Laboratory, Nippon Telegragh and Telephone Public Corporation
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- Some Design Considerations for Multi-Quantum-Well Lasers
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- Photoluminescence of an AlAs/GaAs Superlattice Grown by MBE in the 0.7-0.8 μm Wavelength Region