Optical Absorption of GaAs-AlGaAs Superlattice under Electric Field
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-01-20
著者
-
OKAMOTO Hiroshi
Musashino Electrical Communication Laboratory,NTT
-
Okamoto H
Department Of Systems Innovation Graduate School Of Engineering Science Osaka University
-
SAKU Tadashi
NTT Basic Research Laboratories
-
SAKU Tadashi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation
-
Iwamura Hidetoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Okamaoto H
Laboratory Of Cardiovascular Pharmacology Department Of Biopharmaceutical Sciences Kobe Gakuin Unive
-
Okamoto H
Department Of Systems And Control Engineering Anan National College Of Technology
-
Saku T
Ntt Basic Res. Lab. Kanagawa Jpn
-
Iwamura H
Ntt Opto-electronics Laboratories
-
岡本 宏巳
Department Of Pharmacology Faculty Of Pharmaceutical Sciences Kobe Gakuin University
-
Okamoto Hiroshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Characteristics of the Time-Resolved Photoluminescence in Microcrystalline Si
- Lifetime and diffusion coefficient of carriers in X-ray irradiated a-Si:H
- Absorption Saturation of Excitons in GaAs-AlAs Multi-Quantum-Well Structures
- Hydrogenated Amorphous Silicon/Crystalline Silicon Double Heterojunction X-Ray Sensor
- Spot-size Converter Integrated Laser Diodes (SS-LDs) (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- Carrier Transport in Polycrystalline Silicon Thin Film Solar Cells Grown on a Highly Textured Structure
- Solid Phase Crystallization in Initial Growth Region of Polycrystalline Silicon Layer During Deposition at 180℃ by Plasma Chemical Vapor Deposition
- Carrier Transport in Polycrystalline Silicon Photovoltaic Layer on Highly Textured Substrate
- X-Ray Photoelectron Spectroscopy of Si-As-Te Chalcogenide Glasses Prepared in the Earth's Gravity and in Microgravity
- Valence Band Structure of Si-As-Te Chalcogenide Glasses Prepared in the Gravity Environment of the Earth and in a Microgravity Environment in Space
- Pressure Effects on Electrical and Optical Properties of Si-As-Te Chalcogenide Glasses Fabricated in the Gravity Environment and in a Microgravity Environment
- Fabrication of Si-As-Te Amorphous Semiconductor in a Microgravity Environment
- Correlation between Microstructure and Photovoltaic Performance of Polycrystalline Silicon Thin Film Solar Cells(Semiconductors)
- Development of Full-Color Display Combined with Ultraviolet-Electroluminescence/Photoluminescence Multilayered Thin Films
- Temperature Dependence of Hot-Electron-Induced Electroluminescence from Hydrogenated Amorphous Silicon
- Electroluminescence and Avalanche Multiplication at Electric Field Strength Exceeding 1 MV/cm in Hydrogenated Amorphous SiC Alloy
- Effect of Free Carriers on ac-Driven Electroluminescent Devices with Hydrogenated Amorphous Silicon Carbide Thin Films
- Amino Acids and Peptides. XLIV. Synthesis of Stereoisomeric Pentapeptides of Thiol Proteinase Inhibitor
- Angiotensin II Regulates Liver Regeneration via Type 1 Receptor Following Partial Hepatectomy in Mice(Pharmacology)
- クローズアップ:クリスタルビーム
- Halo Formation from Mismatched Axisymmetric Beams in a Periodic Focusing Channel
- Output Power Enhancement of a Chemical Oxygen-Iodine Laser by Predissociated Iodine Injection
- Observation of Room Temperature Excitons in GaSb-AlGaSb Multi-Quantum Wells
- Compositional Disordering of GaAs-Al_xGa_As Superlattice by Ga Focused Ion Beam Implantation and its Application to Submicron Structure Fabrication
- High-Mobility Inverted Modulation-Doped GaAs/AlGaAs Heterostructures
- Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption
- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
- Room Temperature Operation of Al_Ga_Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
- A Segmented Electrode Multi-Quantum-Well Laser Diode
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
- Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides
- Quantized Conductance Observed in Quantum Wires 2 to 10 μm Long
- Optically Detected Cyclotron Resonance by Multichannel Spectroscopy
- Characteristics of an Optical Filter Composed of Two Vertically Coupled Microring Resonators(Optoelectronics)
- 沃素のマイクロ波放電解離を用いた超音速化学酸素沃素レーザ
- Improvement of Interface Properties in μc-SiC/poly-Si/μc-Si Double Heterojunction Solar Cell
- A Way of Distinguishing Chaos from Random Fractal Sequences Based on the Difference in Time Reversal Symmetry
- Temperature Dependence of Photothermal Divergence Signal of GaAs
- An Optimal Metric for Predicting Chaotic Time Series
- Properties of GaAs/Al_Ga_As Avalanche Photodiode with Superlattice Fabricated by Molecular Beam Epitaxy
- Optical Properties of Dynamically-Modulated Dots and Wires Formed by Surface Acoustic Waves
- Back-Gated Point Contact
- Back-Gated Point Contact
- Quantum Point Contacts in a Density-Tunable Two-Dimensional Electron Gas
- Spontaneous Emission Characteristics of Quantum Well Lasers in Strong Magnetic Fields : An Approach to Quantum-Well-Box Light Source
- Non-Destructive Characterization of InGaAsP/InP Distributed Bragg Reflectors and Regrown Optical Cavity Layers for InP-Based Vertical-Cavity Surface-Emitting Lasers
- Electrical Drift Phenomenon due to Deep Donor Defects Induced by Reactive Ion Etching (RIE) Using Mixtur of Ethane (C_2H_6) and Hydrogen (H_2)
- GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser Diode
- High Quantum Efficiency, High Output Power 1.3 μm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes
- Expression of Low-Molecular-Weight Kininogen in Mouse Vascular Smooth Muscle Cells
- Optical Properties of an InGaAlAs/InP Type-II Superlattice
- Electroabsorption in an AlInAs/InP Type II Superlattice
- Tissue-Specific Expression of Rat Kininogen mRNAs
- Expression of Low-Molecular-Weight Kininogen mRNA in Human Fibroblast WI38 Cells
- Angiotensin-Converting Enzyme Inhibitor Enhances Liver Regeneration Following Partial Hepatectomy : Involvement of Bradykinin B_2 and Angiotensin AT_1 Receptors(Pharmacology)
- The Lipopolysaccharide-Induced Up-Regulation of Bradykinin B_2-Receptor in the Mouse Heart Is Mediated by Tumor Necrosis Factor-α and Angiotensin II(Pharmacology)
- Expressions of Bradykinin B2-Receptor, Kallikrein and Kininogen mRNAs in the Heart Are Altered in Pressure-Overload Cardiac Hypertrophy in Mice
- Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy
- Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy
- Transport Properties of Modulation-Doped Structures Grown by Molecular Beam Epitaxy after Focused Ion Beam Implantation
- High Electron Mobility in AlGaAs/GaAs Modulation-Doped Structures
- Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties
- Effect of Structure on Transport Characteristics of Ballistic One-Dimensional Channel
- Defects in Ga^+ Jon Implanted GaAs-AlAs MQW Structures
- Near Room Temperature CW Operation of 660 nun Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy
- Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs Superlattices
- Comparison between GaAs and Al_xGa_As Quantum Wells in the Light Emission Limit
- Room Temperature Operation of 650 nm AlGaAs Multi-Quantum-Well Laser Diode Grown by Molecular Beam Epitaxy
- Visible-Light Injection-Electroluminescent a-SiC / p-i-n Diode
- Amorphous-Silicon Photovoltaic X-Ray Sensor
- Si and Sn Doping in Al_xGa_As Grown by MBE
- High-Mobility Quantum Wires Fabricated by Ga Focused Ion Beam Shallow Implantation
- DLTS Measurement on Electron-Irradiated GaAs-on-Si
- Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices
- 27a-ZG-19 Anti-Stokes photoluminescence originating due to DX centers
- Near Room Temperature CW Operation at 1.70 μm of MBE Grown InGaAs/InP DH Lasers
- Properties of Molecular Beam Epitaxial In_xGa_As (X≈0.53) Layers Grown on InP Substrates
- Doubly Enhanced Skyrmions in v=2 Bilayer Quantum Hall States : Condensed Matter: Electronic Properties, etc.
- n^+-GaAs Back-Gated Double-Quantum-Well Structures with Full Density Control
- Excitonic Absorption Spectra of GaAs-AlAs Superlattice at High Temperature
- AlSb-GaSb and AlAs-GaAs Monolayer Superlattices Grown by Molecular Beam Epitaxy
- Improvement in Threshold Voltage of 1.55-μm Buried-Heterostructure Vertical-Cavity Surface-Emitting Laser
- Surface Defects on MBE-Grown GaAs
- Direct Observation of Lattice Arrangement in MBE Grown GaAs-AlGaAs Superlattices
- Limit of Electron Mobility in AlGaAs/GaAs Modulation-doped Heterostructures
- Some Design Considerations for Multi-Quantum-Well Lasers
- Room Temperature CW Operation of GaSb/AlGaSb MQW Laser Diodes Grown by MBE
- Optical Absorption of GaAs-AlGaAs Superlattice under Electric Field
- Transport Properties of Parallel Multiple Ballistic Point Contacts
- Photoluminescence of an AlAs/GaAs Superlattice Grown by MBE in the 0.7-0.8 μm Wavelength Region
- High-Mobility Two-Dimensional Electron Gas in an Undoped Heterostructure : Mobility Enhancement after Illumination