n^+-GaAs Back-Gated Double-Quantum-Well Structures with Full Density Control
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概要
- 論文の詳細を見る
We present the fabrication of a novel double-quantum-well(DQW)structure, in which the upper electron layer is supplied via modulation doping while the lower one is fully induced through the field effect from an n^+-GaAs back gate. Low-temperature transport measurements demonstrate that two-dimensional electron gases with equally high mobilities are successfully formed in the lower as well as in the upper QWs. By this approach, the electron density in the lower layer can be controlled over a wide range with a small back-gate bias, and hence the electron-density distribution in the DQW can be tuned arbitrarily by using a front gate in conjunction with the back gate.
- 社団法人応用物理学会の論文
- 2000-04-30
著者
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MURAKI Koji
NTT Basic Research Laboratories, NTT Corporation
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HIRAYAMA Yoshiro
NTT Basic Research Laboratories, NTT Corporation
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SAKU Tadashi
NTT Basic Research Laboratories
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Muraki Koji
Ntt Basic Research Laboratories
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Hirayama Y
Ntt Corp. Kanagawa Jpn
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Hirayama Yoshiro
Ntt Basic Research Laboratories
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Hirayama Y
Ntt Basic Research Laboratories Ntt Corporation
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KUMADA Norio
Department of Physics, Tohoku University
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Kumada Norio
Department Of Physics Tohoku University
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Kumada Norio
Department Of Physics Graduate School Of Science Tohoku University
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