Imaging of Interference between Incident and Reflected Electron Waves at an InAs/GaSb Heterointerface by Low-Temperature Scanning Tunneling Spectroscopy
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概要
- 論文の詳細を見る
We measure the spatial variation of the local density of states normal to an InAs/GaSb heterointerface on a cleaved cross-sectional surface by low-temperature scanning tunneling spectroscopy. Clear standing waves originating from the interference between the incident and reflected electron waves at the interface are observed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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SUZUKI Kyoichi
NTT Basic Research Laboratories
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Ueki Mineo
Ntt Electrical Communications Laboratories
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Takashina Kei
Ntt Basic Research Laboratories Ntt Corporation
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Hirayama Yoshiro
Ntt Basic Research Laboratories
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Perraud Simon
Ntt Basic Research Laboratories Ntt Corporation
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Kanisawa Kiyoshi
Ntt Basic Research Laboratories
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Perraud Simon
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Kanisawa Kiyoshi
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Suzuki Kyoichi
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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