Nanometer-Scale Current-Voltage Spectra Measurement of Resonant Tunneling Diodes Using Scanning Force Microscopy
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概要
- 論文の詳細を見る
We demonstrate that a novel method of current-voltage (I-V) spectra measurement by scanning force microscopy (SFM) reveals local electrical characteristics of resonant tunneling diodes (RTDs) on a nanometer scale. Measured SFM I-V spectra of RTDs show negative differential resistance features, and the spatial resolution of this method was found to be 20 nm. Experimental evidence for the quantized nature of an SFM pointcontact was observed for the first time. High spatial resolution of this method was confirmed by a simple calculation for the area of current flow through RTD. Fine structure in the SFM I-V spectra was also observed.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Shinohara Masanori
Ntt Lsi Laboratories
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TANIMOTO Masafumi
NTT LSI Laboratories
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Kanisawa Kiyoshi
Ntt Basic Research Laboratories
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Tanimoto Masafumi
NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 234-01, Japan
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Kanisawa Kiyoshi
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 234-01, Japan
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