Interface Structures in AlGaAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition (MOCVD)
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概要
- 論文の詳細を見る
AlGaAs/GaAs quantum wells (QWs) were grown by metalorganic chemical vapor deposition (MOCVD) with controlled growth modes: step propagation, and mixtures of step propagation and two-dimensional nucleation. Surface structure on the multilayers was characterized by atomic force microscopy. Photoluminescence (PL) spectra from the QWs with such well-controlled and well-characterized interfaces were obtained for the first time, and PL linewidths were explained by the observed surface structures and growth modes.
- 社団法人応用物理学会の論文
- 1995-02-15
著者
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Shinohara Masanori
Ntt Lsi Laboratories
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Ikuta Kenji
Ntt Lsi Laboratories
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Inoue Naohisa
Ntt Lsi Laboratories
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