Hydrogen Passivation of Carbon Acceptors in AlAs Grown by Atomic Layer Epitaxy

スポンサーリンク

概要

• 論文の詳細を見る

• Hydrogen incorporation and passivation of the carbon acceptors in AlAs grown by atomic layer epitaxy are examined. It is shown that about the same amount of hydrogen as that of carbon impurities are contained in the epilayer, whereas the hole concentration is more than two orders of magnitude lower than the carbon concentration. The carbon acceptor bonds to the hydrogen and is passivated by it. Annealing, especially in nitrogen, removes the hydrogen and causes recovery of the electrical activation of carbon acceptors. The hydrogen is found to originate from the alkyl groups of trimethylaluminum (TMA), not from arsine or the carrier gas.

• 社団法人応用物理学会の論文
• 1994-02-01

著者

• Inoue Naohisa

  Ntt Lsi Laboratories

• YOKOYAMA Haruki

  NTT LSI Laboratories

関連論文

• In Situ Observation of Surface Morphology Evolution Corresponding to Reflection High-Energy Electron Diffraction Oscillation during Molecular Beam Epitaxy of Gallium Arsenide
• In Situ Observation of Monolayer Steps during Molecular Beam Epitaxy of Gallium Arsenide by Scanning Electron Microscopy
• Fabrication of Rectangular Holes along 2×4 Unit Cells on GaAs(001) Reconstructed Surface with a Scanning Tunneling Microscope
• Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy
• Scanning Tunneling Microscopy of (NH_4)_2S_x-Treated GaAs Surfaces Annealed in Vacuum
• Interface Structures in AlGaAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition (MOCVD)
• A High Resolution Cathodoluminescence Microscopy Utilizing Magnetic Field : Semiconductors and Semiconductor Devices
• Hydrogen Passivation of Carbon Acceptors in AlAs Grown by Atomic Layer Epitaxy

スポンサーリンク