Influence of Carrier Scattering on Franz-Keldysh Effect in Near-Surface Region of n-Type GaAs
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概要
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Infltrence of carrier scattering on the Franz-Keldysh (FK) efl'ect in n-type GaAs has been sttrdled by photoreflectance (PR). PH spectra obtained over a tenaperature range from 20 to 3OOKhave been analyzed in terms of the surface field, rnodtrlation field, and broadening energy, T,based on a one-electron FK theory taking into accotrnt the deptla dependence of the built-in fieldand the non-flat band rnodtrlation effect. Temperature dependeraces of the strrface and rnodtrlation fields thus obtained are explained by a tetnperattrre variation of the surface Feruni energy;the surface Feruni energy, pinned around unid gap, shifts towards the conduction band with de-creasing ternperattrre. At luigh temperattrres abox'e 200 K, T is accotrnted f'or by hole scatteringdue to untrunsuc phonons, wluile condtrction-electron scattering by a space-charge associated withan inhomogeneous distribtttion of a scatterer dotninates T at temperatttre below 200 K.
- 社団法人日本物理学会の論文
- 1997-03-15
著者
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Sakai Masamichi
Institute for Materials Research, Tohoku University
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Sakai Masamichi
Institute Of Materials Research Tohoku University
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Shinohara Masanori
Ntt Lsi Laboratories
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