Nanometer-Scale Current-Voltage Spectra Measurement of Resonant Tunneling Diodes Using Scanning Force Microscopy
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概要
- 論文の詳細を見る
- 1996-02-01
著者
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KANISAWA Kiyoshi
NTT Basic Research Laboratories, NTT Corporation
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Shinohara Masanori
Ntt Lsi Laboratories
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TANIMOTO Masafumi
NTT LSI Laboratories
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Kanisawa K
Ntt Basic Research Laboratories
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Kanisawa Kiyoshi
Ntt Basic Research Laboratories
関連論文
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- 28aYB-6 LT-STS study of two-dimensional quantization in In_Ga_As/In_Al_As heterostructures epitaxially grown on lattice-matched InP(111)A substrates
- Fabrication of Rectangular Holes along 2×4 Unit Cells on GaAs(001) Reconstructed Surface with a Scanning Tunneling Microscope
- Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy
- Scanning Tunneling Microscopy of (NH_4)_2S_x-Treated GaAs Surfaces Annealed in Vacuum
- Nanometer-Scale Current-Voltage Spectra Measurement of Resonant Tunneling Diodes Using Scanning Force Microscopy
- Nanometer-Scale Current-Voltage Spectra Measurement of Resonant Tunneling Diodes Using Scanning Force Microscopy
- Growth Properties of Al_xGa_As Grown by MOVPE Using TEG and TMA
- Interface Structures in AlGaAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition (MOCVD)
- Analysis of P^+ -n Junction Capacitance with Three-Dimensional Impurity Profiling Method Using Scanning Tunneling Microscopy
- Scanning Tunneling Microscopy of Cleaved Si and GaAs Surfaces in Air
- Drastic Improvement in Surface Flatness Properties by Using GaAs (111) A Substrates in Molecular Beam Epitaxy
- Quantum Interferometric Spectroscopy: A Novel Technique for Nanometer-Scale Characterization of Heterostructures
- Reconstruction Dependent Electron-Hole Recombination on GaAs(001) Surfaces
- Influence of Carrier Scattering on Franz-Keldysh Effect in Near-Surface Region of n-Type GaAs
- Assembling Indium Atoms into Nanostructures on a Cleaved InAs(110) Surface
- Observation of Tunneling Electron Luminescence at Low Temperatures Using Novel Conductive Transparent Tip
- Imaging of Interference between Incident and Reflected Electron Waves at an InAs/GaSb Heterointerface by Low-Temperature Scanning Tunneling Spectroscopy
- Nanometer-Scale Current-Voltage Spectra Measurement of Resonant Tunneling Diodes Using Scanning Force Microscopy