KANISAWA Kiyoshi | NTT Basic Research Laboratories, NTT Corporation

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著作論文

Unpinning of the Fermi level at clean (111)A surfaces of heavily Si-doped In_Ga_As thin films epitaxially grown on InP substrates
22aXF-13 LT-STM study of the surface Fermi level position of MBE-grown In_Ga_As on (001) and (111)A oriented InP substrates
28aYB-6 LT-STS study of two-dimensional quantization in In_Ga_As/In_Al_As heterostructures epitaxially grown on lattice-matched InP(111)A substrates
Nanometer-Scale Current-Voltage Spectra Measurement of Resonant Tunneling Diodes Using Scanning Force Microscopy
Nanometer-Scale Current-Voltage Spectra Measurement of Resonant Tunneling Diodes Using Scanning Force Microscopy

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