HIRAYAMA Yoshiro | NTT Basic Research Laboratories, NTT Corporation

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概要

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著作論文

Electrostatic coupling between two double-quantum dots studies by resonant tunneling current
Long Spin Relaxation Time Observed in a Lateral Quantum Dot
Difference in Self-Assembling Morphology of Peptide Nanorings
Low Temperature Characteristics of Ambipolar SiO_2/Si/SiO_2 Hall-bar Devices
Unpinning of the Fermi level at clean (111)A surfaces of heavily Si-doped In_Ga_As thin films epitaxially grown on InP substrates
22aXF-13 LT-STM study of the surface Fermi level position of MBE-grown In_Ga_As on (001) and (111)A oriented InP substrates
Electron and Hole Proximity Effects in the InAs/AlSb/GaSb System
Optically Detected Cyclotron Resonance by Multichannel Spectroscopy
Optical Properties of Dynamically-Modulated Dots and Wires Formed by Surface Acoustic Waves
InAs/AlGaSb Piezoresistive Cantilever for Sub-Angstrom Scale Displacement Detection
Application of InAs Freestanding Membranes to Electromechanical Systems
Application of InAs Free-Standing Membranes for Electromechanical Systems
Back-Gated Point Contact
Back-Gated Point Contact
Quantum Point Contacts in a Density-Tunable Two-Dimensional Electron Gas
28aYB-6 LT-STS study of two-dimensional quantization in In_Ga_As/In_Al_As heterostructures epitaxially grown on lattice-matched InP(111)A substrates
Electrical Pump and Probe Measurements of a Quantum Dot in the Coulomb Blockade Regime
Transport Properties of Modulation-Doped Structures Grown by Molecular Beam Epitaxy after Focused Ion Beam Implantation
High Electron Mobility in AlGaAs/GaAs Modulation-Doped Structures
Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties
Effect of Structure on Transport Characteristics of Ballistic One-Dimensional Channel
Defects in Ga^+ Jon Implanted GaAs-AlAs MQW Structures
Near Room Temperature CW Operation of 660 nun Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy
Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs Superlattices
Comparison between GaAs and Al_xGa_As Quantum Wells in the Light Emission Limit
Quantized Conductance in InGaAs Point Contacts at High Temperatures
Hot Electron Ballistic Transport in Small Four-Terminal n-AlGaAs/InGaAs/GaAs Structures
Resistance Oscillations by Electron-Nuclear Spin Coupling in Microscopic Quantum Hall Devices
Resistance Oscillations by Electron-Nuclear Spin Coupling in Microscopic Quantum Hall Devices
Transmission Type RF Single Electron Transistor Operation of a Semiconductor Quantum Dot
Doubly Enhanced Skyrmions in v=2 Bilayer Quantum Hall States : Condensed Matter: Electronic Properties, etc.
n^+-GaAs Back-Gated Double-Quantum-Well Structures with Full Density Control

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