Hirayama Yoshiro | Ntt Basic Research Laboratories

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概要

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著作論文

Electrostatic coupling between two double-quantum dots studies by resonant tunneling current
Long Spin Relaxation Time Observed in a Lateral Quantum Dot
Low Temperature Characteristics of Ambipolar SiO_2/Si/SiO_2 Hall-bar Devices
Unpinning of the Fermi level at clean (111)A surfaces of heavily Si-doped In_Ga_As thin films epitaxially grown on InP substrates
22aXF-13 LT-STM study of the surface Fermi level position of MBE-grown In_Ga_As on (001) and (111)A oriented InP substrates
Electron and Hole Proximity Effects in the InAs/AlSb/GaSb System
Optically Detected Cyclotron Resonance by Multichannel Spectroscopy
Optical Properties of Dynamically-Modulated Dots and Wires Formed by Surface Acoustic Waves
Application of InAs Freestanding Membranes to Electromechanical Systems
Application of InAs Free-Standing Membranes for Electromechanical Systems
Back-Gated Point Contact
Back-Gated Point Contact
Quantum Point Contacts in a Density-Tunable Two-Dimensional Electron Gas
28aYB-6 LT-STS study of two-dimensional quantization in In_Ga_As/In_Al_As heterostructures epitaxially grown on lattice-matched InP(111)A substrates
Electrical Pump and Probe Measurements of a Quantum Dot in the Coulomb Blockade Regime
Transport Properties of Modulation-Doped Structures Grown by Molecular Beam Epitaxy after Focused Ion Beam Implantation
High Electron Mobility in AlGaAs/GaAs Modulation-Doped Structures
Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties
Effect of Structure on Transport Characteristics of Ballistic One-Dimensional Channel
Quantized Conductance in InGaAs Point Contacts at High Temperatures
Hot Electron Ballistic Transport in Small Four-Terminal n-AlGaAs/InGaAs/GaAs Structures
Resistance Oscillations by Electron-Nuclear Spin Coupling in Microscopic Quantum Hall Devices
Resistance Oscillations by Electron-Nuclear Spin Coupling in Microscopic Quantum Hall Devices
Coherence Time of Nuclear Spins in GaAs Quantum Well Probed by Submicron-Scale All-Electrical Nuclear Magnetic Resonance Device
Transmission Type RF Single Electron Transistor Operation of a Semiconductor Quantum Dot
Doubly Enhanced Skyrmions in v=2 Bilayer Quantum Hall States : Condensed Matter: Electronic Properties, etc.
n^+-GaAs Back-Gated Double-Quantum-Well Structures with Full Density Control
Drastic Improvement in Surface Flatness Properties by Using GaAs (111) A Substrates in Molecular Beam Epitaxy
Gate-Controlled Lateral Diodes Formed in Undoped Heterostructure
Transport Properties of Parallel Multiple Ballistic Point Contacts
Independent Tuning of the Confinement and Density in a Quantum Point Contact using a Center Gate and a Back Gate
Application of Novel Double-Schottky-Junction AlGaAs/InAs/GaAs Heterostructures for Thermionic-Emitter Hot-Electron Transistors
Improvement in the Electrical Properties of GaAs/InAs/GaAs Structures through the Use of (111)A Substrates
Single-Turn GaAs/InAs Nanotubes Fabricated Using the Supercritical CO2 Drying Technique
Improvement in the Electrical Properties of GaAs/InAs/GaAs Structures through the Use of (111)A Substrates
Low-Temperature Characteristics of Ambipolar SiO2/Si/SiO2 Hall-Bar Devices
Mechanism of Ga Implantation-Induced Intermixing of GaAs-AlGaAs Material
Giant Magneto-Piezoresistance and Internal Friction in a Two-Dimensional Electron System
Real-Time Observation of Charge States and Energy Relaxation in a Double Quantum Dot
InAs/AlGaSb Piezoresistive Cantilever for Sub-Angstrom Scale Displacement Detection
Imaging of Interference between Incident and Reflected Electron Waves at an InAs/GaSb Heterointerface by Low-Temperature Scanning Tunneling Spectroscopy
Imaging of Local Charge Density in an InAs/GaAs Two-Dimensional Heterostructure by Scanning Tunneling Microscopy
Difference in Self-Assembling Morphology of Peptide Nanorings
High-Mobility Two-Dimensional Electron Gas in an Undoped Heterostructure : Mobility Enhancement after Illumination

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