Seleznev Vladimir | Institute of Semiconductor Physics, Acad. Lavrentyev Ave. 13, 630090 Novosibirsk, Russia

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概要

• 同名の論文著者
• Institute of Semiconductor Physics, Acad. Lavrentyev Ave. 13, 630090 Novosibirsk, Russiaの論文著者

関連著者

• YAMAGUCHI Hiroshi

  NTT Basic Research Laboratories

• Hirayama Yoshiro

  Ntt Basic Research Laboratories Ntt Corporation

• Hirayama Yoshiro

  Ntt Basic Research Laboratories

• Prinz Victor

  Institute Of Semiconductor Physcs

• Seleznev Vladimir

  Institute of Semiconductor Physics, Acad. Lavrentyev Ave. 13, 630090 Novosibirsk, Russia

• Seleznev Vladimir

  Institute Of Semiconductor Physcs

• Yamaguchi Hiroshi

  Ntt Basic Research Laboratories Ntt Corporation

著作論文

• Single-Turn GaAs/InAs Nanotubes Fabricated Using the Supercritical CO2 Drying Technique

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