Single-Turn GaAs/InAs Nanotubes Fabricated Using the Supercritical CO2 Drying Technique
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概要
- 論文の詳細を見る
We have applied supercritical CO2 drying technique to fabricate free-standing semiconductor nanotubes, in order to solve the problem of tube collapsing caused by the capillary forces in the final drying process. We have successfully fabricated damage-free single-turn nanotubes with ultra-thin walls (lesser than 3 nm) and very high tube-length/wall-thickness ratios (higher than 103), which so far could not been realized. These extremely small and light structures with unique geometry are promising for future nanoelectromechanical systems.
- Japan Society of Applied Physicsの論文
- 2003-07-01
著者
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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Hirayama Yoshiro
Ntt Basic Research Laboratories Ntt Corporation
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Hirayama Yoshiro
Ntt Basic Research Laboratories
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Prinz Victor
Institute Of Semiconductor Physcs
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Seleznev Vladimir
Institute of Semiconductor Physics, Acad. Lavrentyev Ave. 13, 630090 Novosibirsk, Russia
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Seleznev Vladimir
Institute Of Semiconductor Physcs
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Yamaguchi Hiroshi
Ntt Basic Research Laboratories Ntt Corporation
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