Transport Properties of Parallel Multiple Ballistic Point Contacts
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概要
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Parallel multiple ballistic point contacts are fabricated using the highly resistive region induced by focused Ga ion beam scanning. The fabricated structure is controlled by a single Schottky gate electrode placed upon it. Quantized currents of μA order are obtained in the fabricated structures.
- 社団法人応用物理学会の論文
- 1990-02-20
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