Low-Temperature Characteristics of Ambipolar SiO2/Si/SiO2 Hall-Bar Devices
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概要
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We present the basic low-temperature characteristics of SiO2/Si/SiO2 Hall-bar devices, where each Hall-bar arm is split into p- and n-type Ohmic contacts made by selective area ion-implantation doping of boron and phosphorus, respectively. Magnetotransport measurements of a 22-nm-thick Si(001) quantum well show Shubnikov–de Haas oscillations of two-dimensional holes in addition to the electrons generated at both sides of the quantum well. We discuss applications for extracting the physical characteristics of this technologically vital material system.
- 2007-04-30
著者
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Ono Yukinori
NTT Basic Research Laboratories
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Gaillard Benjamin
Ntt Basic Research Laboratories Ntt Corporation
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Hirayama Yoshiro
Ntt Basic Research Laboratories
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Gaillard Benjamin
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Takashina Kei
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Takashima Kei
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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