Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
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概要
- 論文の詳細を見る
A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate independently controls the closing and opening of the channel acting as the SET lead, which enables single-electron transfer synchronized with ac gate biases. By applying ac biases to the dual gates with a frequency $f$ of ${\sim}1$ MHz and a phase shift of $\pi$, current staircases quantized in units of ef are observed in drain current vs drain voltage characteristics at 25 K.
- Japan Society of Applied Physicsの論文
- 2003-10-01
著者
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Ono Yukinori
NTT Basic Research Laboratories
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YAMAZAKI Kenji
NTT Basic Research Laboratories
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ZIMMERMAN Neil
National Institute of Standards and Technology
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Takahashi Yasuo
Ntt Basic Research Laboratories Ntt Corporation
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Yamazaki Kenji
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Zimmerman Neil
National Institute of Standards and Technology, Gaithersburg, Maryland 20899, U.S.A.
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