Takahashi Yasuo | Ntt Basic Research Laboratories Ntt Corporation
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概要
関連著者
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Takahashi Yasuo
Ntt Basic Research Laboratories Ntt Corporation
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TAKAHASHI Yasuo
NTT Basic Research Laboratories, NTT Corporation
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Fujiwara Akira
Ntt Basic Research Laboratories Ntt Corporation
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Takahashi Y
Ntt Basic Research Laboratories Ntt Cornoration
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Takahashi Yasuo
Faculty Of Pharmaceutical Sciences Tokyo University Of Science
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Takahashi Y
Hokkaido Univ. Sapporo‐shi Jpn
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Takahashi Y
Osaka University
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Takahashi Yasuo
The Tokyo Metropolitan Research Laboratory Of Public Health:graduate School Of Nutritional And Envir
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Fujiwara Akira
NTT Basic Research Laboratories, NTT Corporation
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Fujiwara A
Ntt Basic Research Laboratories Ntt Corporation
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Fujiwara A
Ntt Corp. Atsugi Jpn
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Murase Katsumi
Ntt Basic Research Laboratories Ntt Corporation:(present)ntt Electronics Corporation (nel)
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NAMATSU Hideo
NTT Basic Research Laboratories
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KURIHARA Kenji
NTT Basic Research Laboratories
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Takahashi Y
Graduate School Of Information Science And Technology Hokkaido Univ.
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Nagase Masao
Ntt Basic Research Laboratories
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Horiguchi Seiji
Ntt Basic Research Laboratories
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TAKAHASHI Yasuo
Graduate School of Information Science and Technology, Hokkaido University
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MURASE Katsumi
NTT Basic Research Laboratories, NTT Corporation
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YAMAZAKI Kenji
NTT Basic Research Laboratories
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KURIHARA Kenji
NTT LSI Laboratories
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Kajiwara Ken
Plasma Research Center University Of Tsukuba:(present)naka Fusion Research Establishment Japan Atomi
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Kurihara Kazuaki
Plasma Research Center University Of Tsukuba:(present) Japan Atomic Energy Research Institute
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Kurihara Kazuaki
Fujitsu Laboratories Inorganic Materials & Polymers Laboratory
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Namatsu H
Ntt Basic Res. Lab. Kanagawa Jpn
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Nagase M
Ntt Basic Research Laboratories Ntt Corporation
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Yamazaki K
Ntt Corp. Kanagawa Jpn
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Yamazaki K
Ntt Basic Research Laboratories Ntt Corporation
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Ono Yukinori
NTT Basic Research Laboratories
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Inokawa Hiroshi
Ntt Basic Research Laboratories Ntt Corporation
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Takahashi Yasuo
Graduate School Of Information Science And Technology Hokkaido Univ.
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Kageshima Hiroyuki
Ntt Basic Research Laboratories
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HORIGUCHI Seishi
Optoelectronics Joint Research Laboratory
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Horiguchi Seiji
Ntt Basic Research Laboratories Ntt Corporation
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Yamazaki Katsuyuki
The Faculty Of Engineering Tokyo Institute Of Technology : (presently) Canon Inc.
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Takahashi Y
Department Of Applied Physics School Of Engineering Tohoku University
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KAGESHIMA Hiroyuki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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Inokawa Hiroshi
Research Institute Of Electronics Shizuoka Univ.
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Shiraishi K
Institute Of Physics University Of Tsukuba
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Inokawa H
Research Institute Of Electronics Shizuoka Univ.
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Itoh Kohei
Department Of Applied Physics And Physico-informatics And Crest-jst Keio University
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SHIRAISHI Kenji
NTT Basic Research Laboratories
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KAGESHIMA Hiroyuki
NTT LSI Laboratories
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Fukatsu Shigeto
Department Of Applied Physics And Physico-informatics And Crest-jst Keio University
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Uematsu Masashi
Ntt Basic Research Laboratories
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Shiraishi K
Institute Of Physics Tsukuba University
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Shiraishi K
Japan Atomic Energy Res. Inst. Gunma Jpn
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Shiraishi Kenji
Institute Of Physics University Of Tsukuba
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Horiguchi Seiji
Department of Electrical and Electronic Engineering, Faculty of Engineering and Resource Science, Akita University
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Itoh Kohei
Department of Applied Physics and CREST-JST, Keio University, Yokohama 223-8522, Japan
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Ono Yukinori
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Ono Yukinori
Ntt Basic Research Laboratories Ntt Cornoration
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Kim Sang
Ntt Basic Research Laboratories Ntt Corporation
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LIU Kuang-Ting
NTT Basic Research Laboratories, NTT Corporation
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HORIKOSHI Yoshiji
School of Science and Engineering, Waseda University
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NAGASE Maso
NTT Basic Research Laboratories
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MURASE Kastusmi
NTT Basic Research Laboratories
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Liu K‐t
National Chen Kung Univ. Twn
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ZIMMERMAN Neil
National Institute of Standards and Technology
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Horikoshi Yoshiji
School Of Science And Engineering Waseda University
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Takahashi Tomonori
Department Of Applied Physics And Physico-informatics And Crest-jst Keio University
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Liu Kuang-ting
Ntt Basic Research Laboratories Ntt Corporation:(present)department Of Electronics Engineering Cheng
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Choi Jung
Department Of Agricultural Biotechnology Seoul National University
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Kurihara Kenji
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan
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Murase Katsumi
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan
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Kageshima Hiroyuki
NTT Basic Research Laboratories, NTT Corporation, Atsugi 243-0198, Japan
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Horiguchi Seiji
NTT Basic Research Labs., NTT Corporation, 3-1 Morinosato-wakamiya, Atsugi 243-0198, Japan
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Horiguchi Seiji
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Horiguchi Seiji
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi 243-0198, Japan
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Choi Jung
Department of Physics, Chungbuk National University, 48 Gaesin, Cheongju, Chungbuk 361-763, Korea
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Takahashi Tomonori
Department of Applied Physics and Physico-Informatics and CREST-JST, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
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Kim Sang
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Uematsu Masashi
NTT Basic Research Laboratories, NTT Corporation, Atsugi 243-0198, Japan
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Inokawa Hiroshi
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Yamazaki Kenji
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Shiraishi Kenji
Institute of Physics, University of Tsukuba, Tsukuba 305-8571, Japan
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Nagase Masao
NTT Basic Research Labs., NTT Corporation, 3-1 Morinosato-wakamiya, Atsugi 243-0198, Japan
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Namatsu Hideo
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan
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Itoh Kohei
Department of Applied Physics and Physico-Informatics and CREST-JST, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
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Zimmerman Neil
National Institute of Standards and Technology, Gaithersburg, Maryland 20899, U.S.A.
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Shiraishi Kenji
Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577, Japan
著作論文
- A Merged Single-Electron Transistor and Metal-Oxide-Semiconductor Transistor Logic for Interface and Multiple-Valued Functions
- A Merged SET-MOSFET Logic for Interface and Multiple-Valued Functions
- Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load
- Single-Electron Detection in Si-Wire Transistors at Room Temperature
- Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
- A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
- Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
- Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
- Observation and Circuit Application of Negative Differential Conductance in Silicon Single-Electron Transistors
- Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
- Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
- Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
- Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
- Simultaneous-Sweep Method for Evaluation of Single-Electron Transistors with Barriers Induced by Gate Electric Field
- Mechanism of Single-Charge Detection using Electron-Hole System in Si-wire Transistors
- Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
- Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
- The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2
- Real-Time Observation of Single-Electron Movement through Silicon Single-Electron Transistor
- Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
- Threshold Voltage of Si Single-Electron Transistor
- Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
- Effect of Si/SiO2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO2