Inokawa Hiroshi | NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

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概要

• Inokawa Hiroshiの詳細を見る
• 同名の論文著者
• NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japanの論文著者

関連著者

• Inokawa Hiroshi

  Ntt Basic Research Laboratories Ntt Corporation

• Horiguchi Seiji

  Ntt Basic Research Laboratories

• Fujiwara Akira

  Ntt Basic Research Laboratories Ntt Corporation

• Takahashi Yasuo

  Ntt Basic Research Laboratories Ntt Corporation

• Horiguchi Seiji

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Inokawa Hiroshi

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

著作論文

• Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor

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