Nagase M | Ntt Basic Research Laboratories Ntt Corporation
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概要
関連著者
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Nagase M
Ntt Basic Research Laboratories Ntt Corporation
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Namatsu H
Ntt Basic Res. Lab. Kanagawa Jpn
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KURIHARA Kenji
NTT LSI Laboratories
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Kurihara Kazuaki
Plasma Research Center University Of Tsukuba:(present) Japan Atomic Energy Research Institute
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Kurihara Kazuaki
Fujitsu Laboratories Inorganic Materials & Polymers Laboratory
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Nagase Masao
Ntt Basic Research Laboratories
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Takahashi Y
Ntt Basic Research Laboratories Ntt Cornoration
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NAMATSU Hideo
NTT Basic Research Laboratories
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Murase Katsumi
Ntt Basic Research Laboratories Ntt Corporation:(present)ntt Electronics Corporation (nel)
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Takahashi Yasuo
Faculty Of Pharmaceutical Sciences Tokyo University Of Science
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KURIHARA Kenji
NTT Basic Research Laboratories
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Kajiwara Ken
Plasma Research Center University Of Tsukuba:(present)naka Fusion Research Establishment Japan Atomi
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Takahashi Y
Osaka University
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NAGASE Masao
NTT LSI Laboratories
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HORIGUCHI Seishi
Optoelectronics Joint Research Laboratory
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Horiguchi Seiji
Ntt Basic Research Laboratories
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Horiguchi Seiji
Ntt Basic Research Laboratories Ntt Corporation
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Takahashi Y
Hokkaido Univ. Sapporo‐shi Jpn
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Yamaguchi Toru
Ntt Basic Research Laboratories Ntt Corporation
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TAKAHASHI Yasuo
NTT Basic Research Laboratories, NTT Corporation
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YAMAZAKI Kenji
NTT Basic Research Laboratories
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NAMATSU Hideo
NTT LSI Laboratories
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Yamazaki K
Ntt Corp. Kanagawa Jpn
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Yamazaki K
Ntt Basic Research Laboratories Ntt Corporation
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Takahashi Yasuo
The Tokyo Metropolitan Research Laboratory Of Public Health:graduate School Of Nutritional And Envir
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Takahashi Yasuo
Ntt Basic Research Laboratories Ntt Corporation
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IWADATE Kazumi
NTT LSI Laboratories
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MURASE Katsumi
NTT LSI Laboratories
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Yamazaki Katsuyuki
The Faculty Of Engineering Tokyo Institute Of Technology : (presently) Canon Inc.
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Iwadate K
Ntt Lsi Laboratories
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Horiguchi Seiji
Department of Electrical and Electronic Engineering, Faculty of Engineering and Resource Science, Akita University
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Ono Yukinori
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Ono Yukinori
Ntt Basic Research Laboratories Ntt Cornoration
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Furuya Keiichi
Department Of Industiral Chemistry Faculty Of Engineering The University Of Tokyo
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MURASE Katsumi
NTT Basic Research Laboratories, NTT Corporation
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TAKAHASHI Yasuo
NTT LSI Laboratories
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町田 信也
東京工業大学大学院理工学研究科:科学技術振興機構crest
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MACHIDA Nobuya
Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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Nagase Masanori
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Takahashi Y
Graduate School Of Information Science And Technology Hokkaido Univ.
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Makino Takamitsu
Central Research Laboratory
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Machida N
Konan Univ. Kobe
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Machida Nobuya
Department Of Chemistry Konan University
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Furuya K
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Makino T
Central Research Laboratory
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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KAGESHIMA Hiroyuki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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Ono Yukinori
NTT Basic Research Laboratories
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TAKAHASHI Yasuo
Graduate School of Information Science and Technology, Hokkaido University
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Shiraishi K
Institute Of Physics University Of Tsukuba
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Fujiwara Akira
NTT Basic Research Laboratories, NTT Corporation
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Fujiwara A
Ntt Basic Research Laboratories Ntt Corporation
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Fujiwara A
Ntt Corp. Atsugi Jpn
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SHIRAISHI Kenji
NTT Basic Research Laboratories
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KAGESHIMA Hiroyuki
NTT LSI Laboratories
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MAKINO Takahiro
NTT Basic Research Laboratories
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Kageshima Hiroyuki
Ntt Basic Research Laboratories
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Yamazaki K
Nippon Motorola Ltd. Tokyo Jpn
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Shiraishi K
Institute Of Physics Tsukuba University
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Shiraishi K
Japan Atomic Energy Res. Inst. Gunma Jpn
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田部 道晴
静岡大学電子工学研究所
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石川 靖彦
静岡大学電子工学研究所
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Ikeda Hiroya
Research Institute Of Electronics Shizuoka University
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TABE Michiharu
Research Institute of Electronics, Shizuoka University
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ISHIKAWA Yasuhiko
Research Institute of Electronics, Shizuoka University
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YAMAUCHI Kazuaki
Research Institute of Electronics, Shizuoka University
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Tabe Michiharu
Research Institue Of Electronics Shizuoka University
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石川 靖彦
Research Institute Of Electronics Shizuoka University
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Ishikawa Yasuhiko
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Yamauchi Kazuaki
Research Institute Of Electronics Shizuoka University
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Tabe Michiharu
Ntt Lsi Laboratories:(present Address)research Institute Of Electronics Shizuoka University
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TAKENAKA Hisataka
NTT Interdisciplinary Research Laboratories
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Ishikawa Y
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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NAGASE Maso
NTT Basic Research Laboratories
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MURASE Kastusmi
NTT Basic Research Laboratories
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FUJIWARA Akira
NTT LSI Laboratories
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Ishikawa Y
Dowa Mining Co. Ltd. Tokyo
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Ishikawa Y
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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Tabe Michiharu
Ntt Lsi Laboratories
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Ono Yukinori
Ntt Lsi Laboratories
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Fujiwara Akira
Ntt Basic Research Laboratories Ntt Corporation
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KANZAKI Kenichi
NTT Basic Research Laboratories, NTT Corporation
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MAKINO Takahiro
NTT LSI Laboratories, Nippon Telegraph and Telephone Corporation
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HORIGUCHI Seiji
NTT LSI Laboratories
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TABE Michiharu
Shizuoka University
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NAKAJIMA Yasuyuki
NTT LSI Laboratories
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Ishikawa Y
Hokkaido Univ. Sapporo Jpn
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NGASE Masao
NTT LSI Laboratories
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Kanzaki Kenichi
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Takahashi Y
Department Of Applied Physics School Of Engineering Tohoku University
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Nakajima Y
Ntt Lsi Laboratories
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NAGATSUKA Hiroyuki
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of T
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Nagatsuka Hiroyuki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
著作論文
- Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
- Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
- Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Linewidth Fluctuations Caused by Polymer Aggregates in Resist Films
- Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
- Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
- Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
- Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
- Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
- Thermal Agglomeration of Thin Single Crystal Si on SiO_2 in Vacuum
- Resist Thinning Effect on Nanometer-Scale Line-Edge Roughness : Instrumentation, Measurement, and Fabrication Technology
- Suppressed Aggregate Extraction Development (SAGEX) Resists
- A New Approach to Reducing Line-Edge Roughness by Using a Cross-Linked Positive-Tone Resist
- Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
- Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
- Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
- Critical Dimension Measurement in Nanometer Scale by Using Scanning Probe Microscopy
- An Electron Beam Nanolithography System and its Application to Si Nanofabrication
- Metrology of Atomic Force Microscopy for Si Nano-Structures
- Phase Coherence and Temperature Dependence of Current-Voltage Characteristics at Low-Current and Low-Voltage Region of Double-Barrier Resonant-Tunneling Diode
- Phase-Breaking Effect Appearing in the Current-Voltage Characteristics of Double-Barrier Resonant Tunneling Diodes - Theoretical Fitting Over Four Orders of Magnitude -
- Phase Breaking Effect Appearing in I-V Characteristics of Double-Barrier Resonant-Tunneling Diodes : Theoretical Fitting Over Four Orders of Magnitude