Kurihara Kazuaki | Plasma Research Center University Of Tsukuba:(present) Japan Atomic Energy Research Institute

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概要

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著作論文

Investigation of Edge Plasmas in the Anchor Cell Region of GAMMA 10 : Fluids, Plasmas, and Electric Discharges
Measurement of End Loss Electrons and Ions from a Hot Ion Plasma in a Tandem Mirror
Velocity-Space Diffusion of Wave-Heated Electrons in a Mirror Field
Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
Study of Potential Formation in an Open Magnetic Field Configuration
Energy Analysis of ECRH-Induced End-Loss Warm Electrons in a Tandem Mirror
Potential Distribution in the End Region of the GAMMA10 Tandem Mirror Associated with Electron Flow Control
Current Balance at an Endplate of the GAMMA10 Tandem Mirror
Axial and Radial Potential Distributions in the GAMMA10 Tandem Mirror
Validity of a Model Electron Distribution Function in an End Region of a Tandem Mirror
A New Approach to Reducing Line-Edge Roughness by Using a Cross-Linked Positive-Tone Resist
Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
Critical Dimension Measurement in Nanometer Scale by Using Scanning Probe Microscopy
An Electron Beam Nanolithography System and its Application to Si Nanofabrication
Metrology of Atomic Force Microscopy for Si Nano-Structures
Effect of Chelating Agents on High Resolution Electron Beam Nanolithography of Spin-Coatable Al_2O_3 Gel Films
Observation of a Radial Current at a Plug/Barrier Cell in GAMMA10 : Fluids, Plasmas, and Electric Discharges
Microoptical Two-Dimensional Devices for the Optical Memory Head of an Ultrahigh Data Transfer Rate and Density Sytem Using a Vertical Cavity Surface Emitting Laser (VCSEL) Array
Fabrication of Micro-Pyramidal Probe Array with Aperture for Near-Field Optical Memory Applications
Quantized Conductance of a Silicon Wire Fabricated by Separation-by-Implanted-Oxygen Technology
Structure of Trimer-Type Isocyanate Hardening Agents and Reactivity of Their Isocyanate Group
Temperature Dependence of Piezoelectric Constant of 0.5PbNi_Nb_O_3-0.5Pb(Zr, Ti)O_3 Ceramics in the Vicinity of Morphotropie Phase Boundary
Piezoelectric Properties of PbNi_Nb_O_3-PbTiO_3-PbZrO_3 Ceramics
Soft X-Ray Reduction Lithography Using Multilayer Mirrors : X-Ray Lithography
Soft X-Ray Reduction Lithography Using Multilayer Mirrors

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