Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality

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概要

• 論文の詳細を見る
• 1999-09-20

著者

• Takahashi Y

  Hokkaido Univ. Sapporo‐shi Jpn

• Nagase M

  Ntt Basic Research Laboratories Ntt Corporation

• Takahashi Y

  Ntt Basic Research Laboratories Ntt Cornoration

• Fujiwara Akira

  NTT Basic Research Laboratories, NTT Corporation

• TAKAHASHI Yasuo

  NTT Basic Research Laboratories, NTT Corporation

• Fujiwara A

  Ntt Basic Research Laboratories Ntt Corporation

• Fujiwara A

  Ntt Corp. Atsugi Jpn

• YAMAZAKI Kenji

  NTT Basic Research Laboratories

• NAMATSU Hideo

  NTT Basic Research Laboratories

• NAGASE Maso

  NTT Basic Research Laboratories

• KURIHARA Kenji

  NTT Basic Research Laboratories

• MURASE Kastusmi

  NTT Basic Research Laboratories

• KURIHARA Kenji

  NTT LSI Laboratories

• Murase Katsumi

  Ntt Basic Research Laboratories Ntt Corporation:(present)ntt Electronics Corporation (nel)

• Fujiwara Akira

  Ntt Basic Research Laboratories Ntt Corporation

• Yamazaki K

  Ntt Corp. Kanagawa Jpn

• Takahashi Y

  Graduate School Of Information Science And Technology Hokkaido Univ.

• Kajiwara Ken

  Plasma Research Center University Of Tsukuba:(present)naka Fusion Research Establishment Japan Atomi

• Kurihara Kazuaki

  Plasma Research Center University Of Tsukuba:(present) Japan Atomic Energy Research Institute

• Yamazaki K

  Ntt Basic Research Laboratories Ntt Corporation

• Kurihara Kazuaki

  Fujitsu Laboratories Inorganic Materials & Polymers Laboratory

• Namatsu H

  Ntt Basic Res. Lab. Kanagawa Jpn

• Takahashi Yasuo

  Faculty Of Pharmaceutical Sciences Tokyo University Of Science

• Takahashi Yasuo

  Ntt Basic Research Laboratories Ntt Corporation

関連論文

• Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
• A Single-Electron-Transistor Logic Gate Family for Binary, Multiple-Valued and Mixed-Mode Logic(New System Paradigms for Integrated Electronics)
• A Simulation Methodology for Single-Electron Multiple-Valued Logics and Its Application to a Latched Parallel Counter
• Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
• Fabrication of double-dot single-electron transistor in silicon nanowire
• Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
• Fabrication of double-dot single-electron transistor in silicon nanowire
• Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
• Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
• Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors
• Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
• Charge-State Control of Phosphorus Donors in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
• Multifunctional Boolean Logic Using Single-Electron Transistors(New System Paradigms for Integrated Electronics)
• Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
• A Multiple-Valued Logic and Memory With Combined Single-Electron and Metal-Oxide-Semiconductor Transistors
• A Merged Single-Electron Transistor and Metal-Oxide-Semiconductor Transistor Logic for Interface and Multiple-Valued Functions
• Multipeak negative-differential-resistance device by combining single-electron and metal-oxide-semiconductor transistors
• A Merged SET-MOSFET Logic for Interface and Multiple-Valued Functions
• Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load
• Single-Electron Detection in Si-Wire Transistors at Room Temperature
• Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
• A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
• Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
• Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
• Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
• Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• Observation and Circuit Application of Negative Differential Conductance in Silicon Single-Electron Transistors
• Real-Time Observation of Single-Electron Movement through Silicon Single-Electron Transistor
• Line-Edge Roughness: Characterization and Material Origin
• Linewidth Fluctuations Caused by Polymer Aggregates in Resist Films
• Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2
• Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
• Si Single-Electron Transistors with High Voltage Gain
• Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
• Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
• Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
• Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
• Electron Tunneling from a Quantum Wire Formed at the Edge of a SIMOX-Si Layer
• Energy Eigenvalues and Quantized Conductance Values of Electrons in Si Quantum Wires on {100} Plane
• Fabrication and Electrical Characteristics of Silicon Quantum Dot Devices
• Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
• Thermal Agglomeration of Thin Single Crystal Si on SiO_2 in Vacuum
• Multifunctional device by using a quantum dot array
• Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs
• Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
• Threshold Voltage of Si Single-Electron Transistor
• Bilayer Resist Method for Room-Temperature Nanoimprint Lithography
• Long-Distance Soliton Transmission up to 20 Gbit/s Using Alternating-Amplitude Solitons and Optical TDM
• pH Dependence of Luminescence in Dye-Doped Sol-Gel Coating Film
• Resist Thinning Effect on Nanometer-Scale Line-Edge Roughness : Instrumentation, Measurement, and Fabrication Technology
• Suppressed Aggregate Extraction Development (SAGEX) Resists
• A New Approach to Reducing Line-Edge Roughness by Using a Cross-Linked Positive-Tone Resist
• Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
• Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
• Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
• Critical Dimension Measurement in Nanometer Scale by Using Scanning Probe Microscopy
• An Electron Beam Nanolithography System and its Application to Si Nanofabrication
• Metrology of Atomic Force Microscopy for Si Nano-Structures
• Three-Dimensional Nanofabrication with 10-nm Resolution
• Effect of Chelating Agents on High Resolution Electron Beam Nanolithography of Spin-Coatable Al_2O_3 Gel Films
• The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO_2
• Edge-Enhancement Writing for Electron Beam Nanolithography
• Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology
• Nanometrology of Si Nanostructures Embedded in SiO_2 using Scanning Electron Microscopy
• Ferroelectric Properties and Second Harmonic Intensities of Stillwellite-Type (La, Ln)BGeO_5 Crystallized Glasses(Optical Properties of Condensed Matter)
• Preparation and Characterization of Dye-Doped Zirconia Gel Films from Zirconium Tetra-n-butoxide Stabilized with Diethanolamine or Acetoin
• Lead Zirconate Titanate Thick Films Fabricated from Sols with and without Its Powder(Surfaces, Interfaces, and Films)
• Variation in Preferred Orientations of TiN Thin Films Prepared by Ion Beam Assisted Deposition
• Consideration of Deformation of TiN Thin Films with Preferred Orientation Prepared by Ion-Beam-Assisted Deposition
• Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition
• Pressure Effect on the Crystal Forms of RbCl and RbBr in Aqueous Solution
• Observation of Crystallization Process from Amorphous Bi_4Ti_3O_ Prepared by Rapid Quenching Method
• Mechanical Properties of TiN Films with the Preferred Orientations by Nano-Indentation Method
• Microwave Performance of 0.3-μm Gate-Length Multi-Finger AlGaN/GaN Heterojunction FETs with Minimized Current Collapse
• Cyclic Crystal Growth and Dissolution in a Closed System
• Temperature Dependent Surface Images of BaTiO_3 Observed by Atomic Force Microscopy
• Quantized Conductance of a Silicon Wire Fabricated by Separation-by-Implanted-Oxygen Technology
• Phase Coherence and Temperature Dependence of Current-Voltage Characteristics at Low-Current and Low-Voltage Region of Double-Barrier Resonant-Tunneling Diode
• Phase-Breaking Effect Appearing in the Current-Voltage Characteristics of Double-Barrier Resonant Tunneling Diodes - Theoretical Fitting Over Four Orders of Magnitude -
• Phase Breaking Effect Appearing in I-V Characteristics of Double-Barrier Resonant-Tunneling Diodes : Theoretical Fitting Over Four Orders of Magnitude
• Sampling Jitter and Finite Aperture Time Effects in Wideband Data Acquisition Systems(Special Section on Analog Circuit Techniques and Related Topics)
• A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology
• Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam
• Flexible Nanofabrication in Three-Dimensional Electron-Beam Lithography Enhanced by Suppression of Proximity Effect
• Three-Dimensional Resist-Coating Technique and Nanopatterning on a Cube Using Electron-Beam Lithography and Etching
• Fabrication of Nanomechanical Structures from Bulk-GaAs Using Angled Ion Etching
• Eectron-Beam Diameter Measurement Using a Knife Edge with a Visor for Scattering Eectrons
• Simultaneous-Sweep Method for Evaluation of Single-Electron Transistors with Barriers Induced by Gate Electric Field
• Analysis of CMOS ADC Nonlinear Input Capacitance
• A Spin-Polarized Scanning Electron Microscope with 5-nm Resolution : Instrumentation, Measurement, and Fabrication Technology
• Resist Coating on Vertical Side Faces Using Conventional Spin Coating for Creating Three-Dimensional Nanostructures in Semiconductors
• Mechanism of Single-Charge Detection using Electron-Hole System in Si-wire Transistors
• Study on High-Resolution and Highly Accurate Electron-Beam Nanolithography(Abstracts of Doctoral Dissertations,Annual Report(from April 2003 to March 2004))
• Effect of Arrangement of Input Gates on Logic Switching Characteristics of Nanodot Array Device
• Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
• Three-Dimensional Nanofabrication with 10-nm Resolution
• Line-Edge Roughness: Characterization and Material Origin
• Modulation of Young's Modulus of Poly(methyl methacrylate) Nanobeam Due to Electron-Beam Exposure
• Electron-Beam Diameter Measurement Using a Knife Edge with a Visor for Scattering Electrons
• Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography

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