Microwave Performance of 0.3-μm Gate-Length Multi-Finger AlGaN/GaN Heterojunction FETs with Minimized Current Collapse
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
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TAKAHASHI Yoshikazu
Ibaraki Prefectural University of Health Sciences
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Takahashi Y
Ulvac Japan Ltd. Ibaraki Jpn
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Takahashi Yoshihiro
Department Of Applied Physics School Of Engineering Tohoku University
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Kinoshita K
Ntt Basic Research Laboratory
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Takahashi Y
Ntt Basic Research Laboratories Ntt Cornoration
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Ohno Y
Jst‐presto Saitama Jpn
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Ohno Yoshikazu
Ulsi Laboratory Mitsubishi Electric Corporation
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Takahashi Y
Tanaka Solid Junction Project Erato Japan Science And Research Corporation
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Takahashi Yoichi
Department Of Nuclear Engineering Faculty Of Engineering University Of Tokyo
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Kunihiro Kazuaki
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Takahashi Yukihiro
Central Research Laboratory Matsushita Electric Industrial Co. Ltd.
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KASAHARA Kensuke
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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TAKAHASHI Yuji
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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OHNO Yasuo
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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Takahashi Y
Department Of Applied Physics School Of Engineering Tohoku University
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Takahashi Yoshinori
Division Of Electrical Electronic And Information Engineering Osaka University
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Kobayashi Keiji
Toshiba Research And Development Center
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Takahashi Y
National Inst. Animal Health Ibaraki Jpn
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Kasahara Kensuke
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Kasahara K
Nec Corp. Otsu‐shi Jpn
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Takahashi Y
Department Of Molecular & Materials Sciences Kyushu University
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