Multifunctional Boolean Logic Using Single-Electron Transistors(<Special Section>New System Paradigms for Integrated Electronics)

スポンサーリンク

概要

• 論文の詳細を見る

• A multifunctional Boolean logic circuit composed of single-electron transistors (SETs) was fabricated and its operation demonstrated. The functions of Boolean logic can be changed by the half-period phase shift of the Coulomb-blockade (CB) oscillation of some SETs in the circuit, and an automatic control based on a feedback process is used to attain an exact shift. The amount of charges in the memory node (MN), which is capacitively coupled to the SET, controls the phase of the CB oscillation, and the output signal of the SET controls the amount of charge in the MN during the feedback process. This feedback process automatically adjusts SET output characteristics in such a way that it is used for the multifunctional Boolean logic. We experimentally demonstrated the automatic phase control and examined the speed of the feedback process by SPICE circuit simulation combined with a compact analytical SET model. The simulation revealed that programming time could be of the order of a few ten nanoseconds, thereby promising high-speed switching of the functions of the multifunctional Boolean logic circuit.

• 社団法人電子情報通信学会の論文
• 2004-11-01

著者

• Ono Yukinori

  NTT Basic Research Laboratories

• Ono Yukinori

  Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation

• Ono Yukinori

  Ntt Basic Research Laboratories Ntt Cornoration

• Inokawa Hiroshi

  Research Institute Of Electronics Shizuoka Univ.

• Inokawa Hiroshi

  Ntt Basic Research Laboratories Ntt Corporation

• TAKAHASHI Yasuo

  Graduate School of Information Science and Technology, Hokkaido University

• Takahashi Y

  Hokkaido Univ. Sapporo‐shi Jpn

• Inokawa H

  Research Institute Of Electronics Shizuoka Univ.

• Takahashi Y

  Ntt Basic Research Laboratories Ntt Cornoration

• Takahashi Y

  Osaka University

• Fujiwara Akira

  NTT Basic Research Laboratories, NTT Corporation

• NISHIGUCHI Katsuhiko

  NTT Basic Research Laboratories, NTT Corporation

• Fujiwara A

  Ntt Basic Research Laboratories Ntt Corporation

• Fujiwara A

  Ntt Corp. Atsugi Jpn

• Takahashi Yasuo

  Graduate School Of Information Science And Technology Hokkaido Univ.

• Fujiwara Akira

  Ntt Basic Research Laboratories Ntt Corporation

• Takahashi Y

  Graduate School Of Information Science And Technology Hokkaido Univ.

• Nishiguchi Katsuhiko

  Ntt Basic Research Laboratories Ntt Corporation

• Takahashi Yasuo

  The Tokyo Metropolitan Research Laboratory Of Public Health:graduate School Of Nutritional And Envir

• Takahashi Yasuo

  Faculty Of Pharmaceutical Sciences Tokyo University Of Science

• Takahashi Yasuo

  Graduate School of Engineering, Oita University

関連論文

• Single-electron transfer in phosphorous-doped Si nanowire FETs
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
• Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
• Effect of UV/ozone Treatment of Nanogap Electrodes for Molecular Devices
• A Single-Electron-Transistor Logic Gate Family for Binary, Multiple-Valued and Mixed-Mode Logic(New System Paradigms for Integrated Electronics)
• A Simulation Methodology for Single-Electron Multiple-Valued Logics and Its Application to a Latched Parallel Counter
• A Field-Effect Transistor with a Deposited Graphite Thin Film
• Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
• Fabrication of double-dot single-electron transistor in silicon nanowire
• Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
• Fabrication of double-dot single-electron transistor in silicon nanowire
• Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
• Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
• Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors
• Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
• Charge-State Control of Phosphorus Donors in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
• Multifunctional Boolean Logic Using Single-Electron Transistors(New System Paradigms for Integrated Electronics)
• Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
• A Multiple-Valued Logic and Memory With Combined Single-Electron and Metal-Oxide-Semiconductor Transistors
• A Merged Single-Electron Transistor and Metal-Oxide-Semiconductor Transistor Logic for Interface and Multiple-Valued Functions
• Multipeak negative-differential-resistance device by combining single-electron and metal-oxide-semiconductor transistors
• A Merged SET-MOSFET Logic for Interface and Multiple-Valued Functions
• Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load
• Single-Electron Detection in Si-Wire Transistors at Room Temperature
• Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
• A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
• Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
• Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
• Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
• Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• Control of Electrical Properties of Single-walled Carbon Nanotubes by Low-energy Electron Irradiation
• Observation and Circuit Application of Negative Differential Conductance in Silicon Single-Electron Transistors
• Low Temperature Characteristics of Ambipolar SiO_2/Si/SiO_2 Hall-bar Devices
• Real-Time Observation of Single-Electron Movement through Silicon Single-Electron Transistor
• Auger Analysis Across an Interface Between Cr Film and Pure Silica(Physics, Process, Instrument & Measurements)
• A Study About Atomic Interaction at the Interface of Transient-Metal/Ceramics
• Auger Analysis of the Interface between 3d-Metals and Silica : Transition of chemical bonding throurh metal/ceramic interface (II)
• Applicaion of Auger Analysis to Titanium/Silica Interface : Transition of chemical bonding through metal/ceramic interface (I)
• Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2
• Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
• Si Single-Electron Transistors with High Voltage Gain
• Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
• Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
• Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
• Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
• Electron Tunneling from a Quantum Wire Formed at the Edge of a SIMOX-Si Layer
• Energy Eigenvalues and Quantized Conductance Values of Electrons in Si Quantum Wires on {100} Plane
• Fabrication and Electrical Characteristics of Silicon Quantum Dot Devices
• Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
• Thermal Agglomeration of Thin Single Crystal Si on SiO_2 in Vacuum
• Multifunctional Device Using Nanodot Array
• Multifunctional device by using a quantum dot array
• Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs
• Charge-Injection Effects in a Single 4,4''-Terphenyldithiol Molecule
• Megabit-Class Size-Configurable 250-MHz SRAM Macrocells with a Squashed-Memory-Cell Architecture
• Thermally-induced formation of Si wire array on an ultrathin (111) silicon-on-insulator substrate
• Long-Distance Soliton Transmission up to 20 Gbit/s Using Alternating-Amplitude Solitons and Optical TDM
• In situ Conductance Measurement of a Limited Number of Nanoparticles during Transmission Electron Microscopy Observation
• pH Dependence of Luminescence in Dye-Doped Sol-Gel Coating Film
• Studies on MOSFET Low-Frequency Noise for Electrometer Applications
• Photoluminescence from a Silicon Quantum Well Formed on Separation by Implanted Oxygen Substrate
• Ferroelectric Properties and Second Harmonic Intensities of Stillwellite-Type (La, Ln)BGeO_5 Crystallized Glasses(Optical Properties of Condensed Matter)
• Preparation and Characterization of Dye-Doped Zirconia Gel Films from Zirconium Tetra-n-butoxide Stabilized with Diethanolamine or Acetoin
• Lead Zirconate Titanate Thick Films Fabricated from Sols with and without Its Powder(Surfaces, Interfaces, and Films)
• Variation in Preferred Orientations of TiN Thin Films Prepared by Ion Beam Assisted Deposition
• Consideration of Deformation of TiN Thin Films with Preferred Orientation Prepared by Ion-Beam-Assisted Deposition
• Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition
• Pressure Effect on the Crystal Forms of RbCl and RbBr in Aqueous Solution
• Observation of Crystallization Process from Amorphous Bi_4Ti_3O_ Prepared by Rapid Quenching Method
• Mechanical Properties of TiN Films with the Preferred Orientations by Nano-Indentation Method
• Microwave Performance of 0.3-μm Gate-Length Multi-Finger AlGaN/GaN Heterojunction FETs with Minimized Current Collapse
• Cyclic Crystal Growth and Dissolution in a Closed System
• Temperature Dependent Surface Images of BaTiO_3 Observed by Atomic Force Microscopy
• Quantized Conductance of a Silicon Wire Fabricated by Separation-by-Implanted-Oxygen Technology
• Sampling Jitter and Finite Aperture Time Effects in Wideband Data Acquisition Systems(Special Section on Analog Circuit Techniques and Related Topics)
• Simultaneous-Sweep Method for Evaluation of Single-Electron Transistors with Barriers Induced by Gate Electric Field
• Analysis of CMOS ADC Nonlinear Input Capacitance
• Foundry Metal-Oxide-Semiconductor Field-Effect-Transistor Electrometer for Single-Electron Detection
• Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping
• Use of finite element method for comparison of sound field diffuseness in reverberation rooms with and without absorption materials
• Electrical Characterization of Terphenyl-Based Molecular Devices
• Molecular-Mediated Single-Electron Devices Operating at Room Temperature
• Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
• Low-Temperature Characteristics of Ambipolar SiO2/Si/SiO2 Hall-Bar Devices
• Fabrication Method of Sub-100 nm Metal-Oxide-Semiconductor Field-Effect Transistor with Thick Gate Oxide
• Single-Photon Detection by a Simple Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistor
• Effect of Arrangement of Input Gates on Logic Switching Characteristics of Nanodot Array Device
• Studies on Metal–Oxide–Semiconductor Field-Effect Transistor Low-Frequency Noise for Electrometer Applications
• Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon
• Back-Gate Effect on Coulomb Blockade in Silicon-on-Insulator Trench Wires
• Single-Electron-Resolution Electrometer Based on Field-Effect Transistor
• Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
• Real-Time Observation of Single-Electron Movement through Silicon Single-Electron Transistor
• Field-Effect Transistor with Deposited Graphite Thin Film
• Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
• Charge-Injection Effects in a Single 4,4$''$-Terphenyldithiol Molecule

もっと見る 閉じる

スポンサーリンク