Single-Photon Detection by a Simple Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistor
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概要
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We demonstrate that a simple silicon-on-insulator (SOI) metal--oxide--semiconductor field-effect transistor (MOSFET) which can be found in ordinary integrated circuits could operate as a single-photon detector at room temperature. A potential well created by n+p-n+ junctions is used to trap photo-generated holes, which is detected as increased electron current in the bottom channel with a single-hole sensitivity. Although peaks in histograms of drain current are overlapped due to relatively small sensitivity to the holes, signal-to-noise ratio (SNR) is large enough to determine the position and height of each peak corresponding to the discrete number of trapped holes. In addition to this single-photon detection capability, the simple MOSFET structure could also benefit from the potentially high quantum efficiency (QE) since it includes fewer absorbing electrodes to the incident light.
- 2012-06-25
著者
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Inokawa Hiroshi
Research Institute Of Electronics Shizuoka Univ.
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Satoh Hiroaki
Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan
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Du Wei
Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan
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Ono Atsushi
Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan
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Inokawa Hiroshi
Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan
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