Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
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概要
- 論文の詳細を見る
An electrometer based on field-effect transistors was fabricated on a silicon-on-insulator substrate. The electrometer has a nanometer-scale small channel and a capacitively coupled node, where single electrons are stored. We discuss the dependence of the charge sensitivity of the electrometer on its structure and on its operation condition and gives guides for achieving the higher charge sensitivity. The device optimization based on this dependence allows the room-temperature demonstration of the electrometer with extremely high charge sensitivity of 0.0013 e/√Hz at 1Hz.
- 社団法人電子情報通信学会の論文
- 2008-07-02
著者
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Ono Yukinori
NTT Basic Research Laboratories
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Ono Yukinori
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Ono Yukinori
Ntt Basic Research Laboratories Ntt Cornoration
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Inokawa Hiroshi
Research Institute Of Electronics Shizuoka Univ.
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Inokawa Hiroshi
Ntt Basic Research Laboratories Ntt Corporation
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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Inokawa H
Research Institute Of Electronics Shizuoka Univ.
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Fujiwara Akira
NTT Basic Research Laboratories, NTT Corporation
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NISHIGUCHI Katsuhiko
NTT Basic Research Laboratories, NTT Corporation
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KOECHLIN Charlie
NTT Basic Research Laboratories, NTT Corporation
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Fujiwara A
Ntt Basic Research Laboratories Ntt Corporation
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Fujiwara A
Ntt Corp. Atsugi Jpn
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Fujiwara Akira
Ntt Basic Research Laboratories Ntt Corporation
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Koechlin Charlie
Ntt Basic Research Laboratories Ntt Corporation
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Nishiguchi Katsuhiko
Ntt Basic Research Laboratories Ntt Corporation
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Yamaguchi Hiroshi
Ntt Basic Research Laboratories Ntt Corporation
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories, NTT Corporation
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