Back-Gate Effect on Coulomb Blockade in Silicon-on-Insulator Trench Wires

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概要

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• A back-gate (BG) effect on a Coulomb blockade in a double-gate silicon-on-insulator (SOI) nanowire is investigated. The nanowire, which is situated at the bottom of a trench and connected to thicker source/drain regions, has a naturally formed barrier at both ends and works as a single-electron transistor at low temperatures. We found that a negative BG voltage increases the charging energy of the Coulomb-blockade island in the nanowire as well as the tunnel resistance of the barriers. This indicates the possibility that the BG voltage shifts the electron wave functions in the source/drain area away from the Coulomb-blockade island and decreases the capacitance of the small junctions located at both ends of the island.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-10-15

著者

• Ono Yukinori

  NTT Basic Research Laboratories

• Inokawa Hiroshi

  Ntt Basic Research Laboratories Ntt Corporation

• NAMATSU Hideo

  NTT Basic Research Laboratories

• Takahashi Yasuo

  Graduate School Of Information Science And Technology Hokkaido Univ.

• Fujiwara Akira

  Ntt Basic Research Laboratories Ntt Corporation

• Nishiguchi Katsuhiko

  Ntt Basic Research Laboratories Ntt Corporation

• Crauste Olivier

  ESPCI, 10 rue Vauquelin, 75005 Paris CEDEX, France

• Horiguchi Seiji

  Faculty of Engineering and Resource Science, Akita University, 1-1 Tegata-gakuen-machi, Akita 010-8502, Japan

• Nishiguchi Katsuhiko

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Takahashi Yasuo

  Graduate School of Engineering, Oita University

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