Si Single-Electron Transistors with High Voltage Gain

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概要

• 論文の詳細を見る

• Si single-electron transistors with a high voltage gain at a considerably high temperature have been fabricated by vertical pattern-dependent oxidation. The method enables the automatic formation of very small tunnel junctions having capacitances of less than 1 aF. In addition, the use of a thin (a few ten nanometers thick) gate oxide allows a strong coupling of the island to the gate, which results in a gate capacitance larger than the junction capacitances. It is demonstrated at 27 K that an inverting voltage gain, which is governed by the ratio of the gate capacitance to the drain tunnel capacitance, exceeds 3 under constant drain current conditions.

• 社団法人電子情報通信学会の論文
• 2001-08-01

著者

• Ono Yukinori

  Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation

• Ono Yukinori

  Ntt Basic Research Laboratories Ntt Cornoration

• TAKAHASHI Yasuo

  Graduate School of Information Science and Technology, Hokkaido University

• Takahashi Y

  Hokkaido Univ. Sapporo‐shi Jpn

• Takahashi Y

  Ntt Basic Research Laboratories Ntt Cornoration

• Takahashi Y

  Osaka University

• Takahashi Yasuo

  Graduate School Of Information Science And Technology Hokkaido Univ.

• ONO Yukinori

  The authors are with NTT Basic Research Laboratolies, NTT Corporation

• YAMAZAKI Kenji

  The authors are with NTT Basic Research Laboratolies, NTT Corporation

• TAKAHASHI Yasuo

  The authors are with NTT Basic Research Laboratolies, NTT Corporation

• Yamazaki K

  Ntt Corp. Kanagawa Jpn

• Takahashi Y

  Graduate School Of Information Science And Technology Hokkaido Univ.

• Yamazaki K

  Ntt Basic Research Laboratories Ntt Corporation

• Yamazaki Katsuyuki

  The Faculty Of Engineering Tokyo Institute Of Technology : (presently) Canon Inc.

• Takahashi Y

  Department Of Applied Physics School Of Engineering Tohoku University

• Takahashi Yasuo

  The Tokyo Metropolitan Research Laboratory Of Public Health:graduate School Of Nutritional And Envir

• Ono Yukinori

  The Authors Are With Ntt Basic Research Laboratolies Ntt Corporation

• Takahashi Yasuo

  Faculty Of Pharmaceutical Sciences Tokyo University Of Science

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