Charge-State Control of Phosphorus Donors in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-30
著者
-
HORIGUCHI Seishi
Optoelectronics Joint Research Laboratory
-
Ono Yukinori
NTT Basic Research Laboratories
-
HORIGUCHI Seiji
Department of Electrical and Electronic Engineering, Akita University
-
Ono Yukinori
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
-
Ono Yukinori
Ntt Basic Research Laboratories Ntt Cornoration
-
Inokawa Hiroshi
Research Institute Of Electronics Shizuoka Univ.
-
Inokawa Hiroshi
Ntt Basic Research Laboratories Ntt Corporation
-
Horiguchi Seiji
Department Of Electrical And Electronic Engineering Akita University
-
Horiguchi Seiji
Ntt Basic Research Laboratories Ntt Corporation
-
TAKAHASHI Yasuo
Graduate School of Information Science and Technology, Hokkaido University
-
Takahashi Y
Hokkaido Univ. Sapporo‐shi Jpn
-
Inokawa H
Research Institute Of Electronics Shizuoka Univ.
-
Takahashi Y
Ntt Basic Research Laboratories Ntt Cornoration
-
NISHIGUCHI Katsuhiko
NTT Basic Research Laboratories, NTT Corporation
-
Takahashi Yasuo
Graduate School Of Information Science And Technology Hokkaido Univ.
-
Takahashi Y
Graduate School Of Information Science And Technology Hokkaido Univ.
-
Nishiguchi Katsuhiko
Ntt Basic Research Laboratories Ntt Corporation
-
Horiguchi Seiji
Department Of Electrical And Electronic Engineering Faculty Of Engineering And Resource Science Akit
関連論文
- DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH_3
- Single-electron transfer in phosphorous-doped Si nanowire FETs
- Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
- Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
- Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
- Fowler-Nordheim Current Oscillations in Si(111)/SiO_2/Twisted-Si(111) Tunneling Structures
- Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
- Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
- Effect of UV/ozone Treatment of Nanogap Electrodes for Molecular Devices
- A Single-Electron-Transistor Logic Gate Family for Binary, Multiple-Valued and Mixed-Mode Logic(New System Paradigms for Integrated Electronics)
- A Simulation Methodology for Single-Electron Multiple-Valued Logics and Its Application to a Latched Parallel Counter
- Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
- A Field-Effect Transistor with a Deposited Graphite Thin Film
- Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
- Fabrication of double-dot single-electron transistor in silicon nanowire
- Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
- Fabrication of double-dot single-electron transistor in silicon nanowire
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
- Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors
- Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Charge-State Control of Phosphorus Donors in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
- Multifunctional Boolean Logic Using Single-Electron Transistors(New System Paradigms for Integrated Electronics)
- Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
- A Multiple-Valued Logic and Memory With Combined Single-Electron and Metal-Oxide-Semiconductor Transistors
- A Merged Single-Electron Transistor and Metal-Oxide-Semiconductor Transistor Logic for Interface and Multiple-Valued Functions
- Multipeak negative-differential-resistance device by combining single-electron and metal-oxide-semiconductor transistors
- A Merged SET-MOSFET Logic for Interface and Multiple-Valued Functions
- Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires
- Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
- Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
- Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load
- Single-Electron Detection in Si-Wire Transistors at Room Temperature
- Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
- A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
- Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
- Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
- Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
- Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Control of Electrical Properties of Single-walled Carbon Nanotubes by Low-energy Electron Irradiation
- Observation and Circuit Application of Negative Differential Conductance in Silicon Single-Electron Transistors
- Low Temperature Characteristics of Ambipolar SiO_2/Si/SiO_2 Hall-bar Devices
- Real-Time Observation of Single-Electron Movement through Silicon Single-Electron Transistor
- Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2
- Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
- Si Single-Electron Transistors with High Voltage Gain
- Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
- Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
- Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
- Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
- Electron Tunneling from a Quantum Wire Formed at the Edge of a SIMOX-Si Layer
- Energy Eigenvalues and Quantized Conductance Values of Electrons in Si Quantum Wires on {100} Plane
- Fabrication and Electrical Characteristics of Silicon Quantum Dot Devices
- Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
- Thermal Agglomeration of Thin Single Crystal Si on SiO_2 in Vacuum
- Multifunctional Device Using Nanodot Array
- Multifunctional device by using a quantum dot array
- Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs
- Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
- Threshold Voltage of Si Single-Electron Transistor
- Charge-Injection Effects in a Single 4,4''-Terphenyldithiol Molecule
- Megabit-Class Size-Configurable 250-MHz SRAM Macrocells with a Squashed-Memory-Cell Architecture
- Thermally-induced formation of Si wire array on an ultrathin (111) silicon-on-insulator substrate
- Long-Distance Soliton Transmission up to 20 Gbit/s Using Alternating-Amplitude Solitons and Optical TDM
- In situ Conductance Measurement of a Limited Number of Nanoparticles during Transmission Electron Microscopy Observation
- pH Dependence of Luminescence in Dye-Doped Sol-Gel Coating Film
- Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
- Studies on MOSFET Low-Frequency Noise for Electrometer Applications
- Photoluminescence from a Silicon Quantum Well Formed on Separation by Implanted Oxygen Substrate
- Ferroelectric Properties and Second Harmonic Intensities of Stillwellite-Type (La, Ln)BGeO_5 Crystallized Glasses(Optical Properties of Condensed Matter)
- Preparation and Characterization of Dye-Doped Zirconia Gel Films from Zirconium Tetra-n-butoxide Stabilized with Diethanolamine or Acetoin
- Quantized Conductance of a Silicon Wire Fabricated by Separation-by-Implanted-Oxygen Technology
- Sampling Jitter and Finite Aperture Time Effects in Wideband Data Acquisition Systems(Special Section on Analog Circuit Techniques and Related Topics)
- Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
- Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
- Low-Pressure OMVPE of GaAs Using Triethylgallium
- Simultaneous-Sweep Method for Evaluation of Single-Electron Transistors with Barriers Induced by Gate Electric Field
- Analysis of CMOS ADC Nonlinear Input Capacitance
- Foundry Metal-Oxide-Semiconductor Field-Effect-Transistor Electrometer for Single-Electron Detection
- Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping
- Use of finite element method for comparison of sound field diffuseness in reverberation rooms with and without absorption materials
- Electrical Characterization of Terphenyl-Based Molecular Devices
- Molecular-Mediated Single-Electron Devices Operating at Room Temperature
- Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
- Low-Temperature Characteristics of Ambipolar SiO2/Si/SiO2 Hall-Bar Devices
- Fabrication Method of Sub-100 nm Metal-Oxide-Semiconductor Field-Effect Transistor with Thick Gate Oxide
- Single-Photon Detection by a Simple Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistor
- Effect of Arrangement of Input Gates on Logic Switching Characteristics of Nanodot Array Device
- Studies on Metal–Oxide–Semiconductor Field-Effect Transistor Low-Frequency Noise for Electrometer Applications
- Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon
- Back-Gate Effect on Coulomb Blockade in Silicon-on-Insulator Trench Wires
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor
- Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
- Real-Time Observation of Single-Electron Movement through Silicon Single-Electron Transistor
- Field-Effect Transistor with Deposited Graphite Thin Film
- Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
- Fowler–Nordheim Current Oscillations in Si(111)/SiO2/Twisted-Si(111) Tunneling Structures
- Charge-Injection Effects in a Single 4,4$''$-Terphenyldithiol Molecule