Charge-Injection Effects in a Single 4,4$''$-Terphenyldithiol Molecule

スポンサーリンク

概要

• 論文の詳細を見る

• The effects of charge injections into a single 4,4$''$-terphenyldithiol molecule were investigated using density-functional calculations. It is shown that the atomic structures of the molecule are remarkably modified by electron or hole injections into it. Strengthening and weakening of the C–C and C–S $\pi$-bonds brought about by the charge injections are closely associated with these structural modifications. Analyses of the wave functions of the highest occupied molecular orbital (HOMO) and the lowest un-occupied molecular orbital (LUMO), especially those on the arrangements of the nodes and loops of them, help our understanding of such modulations of the bond orders. It is also shown that the energies required for charging the molecule are considerably affected by these deformations. These results suggest the importance of the electron–lattice interactions in the current conduction due to the single-electron tunneling through the 4,4$''$-terphenyldithiol molecular single-electron island.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-12-15

著者

• Inokawa Hiroshi

  Ntt Basic Research Laboratories Ntt Corporation

• UCHIDA Kazuyuki

  NTT Basic Research Laboratories, NTT Corporation

• Kageshima Hiroyuki

  Ntt Basic Research Laboratories

• Kageshima Hiroyuki

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

関連論文

• Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
• A Single-Electron-Transistor Logic Gate Family for Binary, Multiple-Valued and Mixed-Mode Logic(New System Paradigms for Integrated Electronics)
• A Simulation Methodology for Single-Electron Multiple-Valued Logics and Its Application to a Latched Parallel Counter
• Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
• Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
• Charge-State Control of Phosphorus Donors in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
• Multifunctional Boolean Logic Using Single-Electron Transistors(New System Paradigms for Integrated Electronics)
• Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
• A Merged Single-Electron Transistor and Metal-Oxide-Semiconductor Transistor Logic for Interface and Multiple-Valued Functions
• A Merged SET-MOSFET Logic for Interface and Multiple-Valued Functions
• RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
• Control of Electrical Properties of Single-walled Carbon Nanotubes by Low-energy Electron Irradiation
• Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
• Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
• Microscopic Mechanism of Oxygen Transport during Thermal Silicon Oxidation
• Theoretical Study of Excess Si Emitted from Si-oxide/Si Interfaces
• Charge-Injection Effects in a Single 4,4''-Terphenyldithiol Molecule
• Studies on MOSFET Low-Frequency Noise for Electrometer Applications
• Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl
• Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
• Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
• Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
• Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
• Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
• Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model
• Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission
• Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
• Simultaneous-Sweep Method for Evaluation of Single-Electron Transistors with Barriers Induced by Gate Electric Field
• Foundry Metal-Oxide-Semiconductor Field-Effect-Transistor Electrometer for Single-Electron Detection
• Contact Conductance Measurement of Locally Suspended Graphene on SiC
• Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
• Tight-Binding Approach to Initial Stage of the Graphitization Process on a Vicinal SiC Surface
• Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
• Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
• Magnetism of Single-Walled Carbon Nanotube with Pd Nanowire(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• A Theoretical Investigation of the Potential for Infer-Surface Migration of Ga Adatoms between GaAs(001) and (111)B Surfaces
• A Method for Calculating Momentum Matrix Elements with Pseudopotentials
• Universal Theory of Si Oxidation Rate Taking Account of Interfacial Si Emission
• First-Principles Study of the Oxide Growth Process on Silicon Surfaces and at Silicon-Oxide/Silicon Interfaces
• Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface
• Molecular-Mediated Single-Electron Devices Operating at Room Temperature
• Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001) (Special Issue : Solid State Devices and Materials (1))
• Studies on Metal–Oxide–Semiconductor Field-Effect Transistor Low-Frequency Noise for Electrometer Applications
• Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon
• Theoretical Investigation of Oxygen Diffusion in Compressively Strained High-Density $ \alpha $-Quartz
• First-Principles Analyses of O2 Molecules around Ultrathin SiO2/Si(100) Interface
• Back-Gate Effect on Coulomb Blockade in Silicon-on-Insulator Trench Wires
• Single-Electron-Resolution Electrometer Based on Field-Effect Transistor
• Effect of Nitrogen on Diffusion in Silicon Oxynitride
• Study on Thermoelectric Properties of Graphene
• Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
• The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2
• Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio
• Stress Dependence of Oxidation Reaction at SiO2/Si Interfaces during Silicon Thermal Oxidation
• Oxygen Trap Hypothesis in Silicon Oxide
• Effect of Si/SiO2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO2
• Transport Mechanism of Interfacial Network Forming Atoms during Silicon Oxidation
• Origin of Schottky Barrier Modification by Hydrogen on Diamond
• First-Principles Calculations of Uniaxial Strain Effects on Manganese in Silicon
• Charge-Injection Effects in a Single 4,4$''$-Terphenyldithiol Molecule
• The Effect of Chlorine on Silicon Oxidation: Simulation based on the Interfacial Silicon Emission Model
• Quantum Hall Effect and Carrier Scattering in Quasi-Free-Standing Monolayer Graphene
• Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio

もっと見る 閉じる

スポンサーリンク