Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001) (Special Issue : Solid State Devices and Materials (1))
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
-
Sekine Yoshiaki
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
-
Hibino Hiroki
Ntt Basic Research Laboratories
-
Kageshima Hiroyuki
Ntt Basic Research Laboratories
-
Tanabe Shinichi
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
関連論文
- Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
- Detection of Magnetic Domain Wall in a Permalloy Wire by the Local Hall Effect
- Velocity Measurements of Magnetic Domain Wall by Local Hall Effect
- Electric-Field-Controllable Spin Interferometer Based on the Rashba Spin-Orbit Interaction
- Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor p-In_Mn_As
- RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
- Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
- Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
- Microscopic Mechanism of Oxygen Transport during Thermal Silicon Oxidation
- Theoretical Study of Excess Si Emitted from Si-oxide/Si Interfaces
- DC-Resistive-Heating-Induced Step Bunching on Vicinal Si (111)
- Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
- Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl
- Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
- Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
- Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
- Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
- Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
- Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model
- Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission
- Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
- TEM Moire Pattern and Scanning Auger Electron Microscope Analysis of Anomalous Si Incorporation into MBE-grown Ge on Si(111)
- Reflection High-Energy Electron Diffraction Studies of Vicinal Si(111) Surfaces
- Real-Time Observation of (1×1)-(7×7) Phase Transition on Vicinal Si(111) Surfaces by Scanning Tunneling Microscopy
- 27pTX-9 Experimental study of spin interference phenomena in InGaAs/InAlAs rectangular loop arrays
- Contact Conductance Measurement of Locally Suspended Graphene on SiC
- Observation of Incomplete Surface Melting of Si Using Medium-Energy Ion Scattering Spectroscopy
- Patterning-Assisted Control for Ordered Arrangement of Atomic Steps on Si(111) Surfaces
- Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
- Tight-Binding Approach to Initial Stage of the Graphitization Process on a Vicinal SiC Surface
- Boron Nitride Thin Films Grown on Graphitized 6H–SiC Substrates by Metalorganic Vapor Phase Epitaxy
- Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
- Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Magnetism of Single-Walled Carbon Nanotube with Pd Nanowire(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- A Theoretical Investigation of the Potential for Infer-Surface Migration of Ga Adatoms between GaAs(001) and (111)B Surfaces
- A Method for Calculating Momentum Matrix Elements with Pseudopotentials
- Universal Theory of Si Oxidation Rate Taking Account of Interfacial Si Emission
- First-Principles Study of the Oxide Growth Process on Silicon Surfaces and at Silicon-Oxide/Silicon Interfaces
- Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface
- Thin Graphitic Structure Formation on Various Substrates by Gas-Source Molecular Beam Epitaxy Using Cracked Ethanol
- Origin of Reducing Domain Boundaries of Si(111)-7×7 during Homoepitaxial Growth
- Graphene Growth from a Spin-Coated Polymer without a Reactive Gas
- Formation of Graphene Nanofin Networks on Graphene/SiC(0001) by Molecular Beam Epitaxy (Special Issue : Microprocesses and Nanotechnology)
- Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001) (Special Issue : Solid State Devices and Materials (1))
- Macroscopic Single-Domain Graphene Growth on Polycrystalline Nickel Surface
- Beating Analysis of Shubnikov de Haas Oscillation in In0.53Ga0.47As Double Quantum Well toward Spin Filter Applications
- Graphene Growth from Spin-Coated Polymers without a Gas
- Beating Analysis of Shubnikov de Haas Oscillation in In_Ga_As Double Quantum Well toward Spin Filter Applications
- Microscopic Raman Mapping of Epitaxial Graphene on 4H-SiC(0001)
- Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon
- Self-spreading of Supported Lipid Bilayer on SiO_2 Surface Bearing Graphene Oxide
- Study of Graphene Growth by Gas-Source Molecular Beam Epitaxy Using Cracked Ethanol: Influence of Gas Flow Rate on Graphitic Material Deposition
- Theoretical Investigation of Oxygen Diffusion in Compressively Strained High-Density $ \alpha $-Quartz
- First-Principles Analyses of O2 Molecules around Ultrathin SiO2/Si(100) Interface
- Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor $p$-In0.97Mn0.03As
- Effect of Nitrogen on Diffusion in Silicon Oxynitride
- Study on Thermoelectric Properties of Graphene
- The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2
- Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio
- Epitaxial Trilayer Graphene Mechanical Resonators Obtained by Electrochemical Etching Combined with Hydrogen Intercalation
- Stress Dependence of Oxidation Reaction at SiO2/Si Interfaces during Silicon Thermal Oxidation
- Oxygen Trap Hypothesis in Silicon Oxide
- Effect of Si/SiO2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO2
- Transport Mechanism of Interfacial Network Forming Atoms during Silicon Oxidation
- Origin of Schottky Barrier Modification by Hydrogen on Diamond
- Growth of Twinned Epitaxial Layers on Si(111)$\sqrt{3}\times\sqrt{3}$-B Studied by Low-Energy Electron Microscopy
- First-Principles Calculations of Uniaxial Strain Effects on Manganese in Silicon
- Charge-Injection Effects in a Single 4,4$''$-Terphenyldithiol Molecule
- The Effect of Chlorine on Silicon Oxidation: Simulation based on the Interfacial Silicon Emission Model
- Graphene-modified Interdigitated Array Electrode : Fabrication, Characterization, and Electrochemical Immunoassay Application
- Quantum Hall Effect and Carrier Scattering in Quasi-Free-Standing Monolayer Graphene
- Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio