The Effect of Chlorine on Silicon Oxidation: Simulation based on the Interfacial Silicon Emission Model
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概要
- 論文の詳細を見る
Silicon oxidation in dry oxygen containing small amounts (1–3%) of chlorine gas is simulated based on the interfacial silicon emission model. We assume that the presence of chlorine (Cl) reduces the interfacial silicon emission, which governs the oxidation rate at the interface. The simulation is done by reducing the rate of Si-atom emission in the presence of Cl. In addition, the equilibrium concentration of oxygen in the oxide is increased in proportion to Cl concentration to fit the experimental oxide thickness.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-04-15
著者
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SHIRAISHI Kenji
NTT Basic Research Laboratories
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Kageshima Hiroyuki
Ntt Basic Research Laboratories
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Uematsu Masashi
Ntt Basic Research Laboratories
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Uematsu Masashi
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Shiraishi Kenji
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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