Valence Band Offsets of the In_xGa_<1-x>As/GaAs Strained-Layer Superlattice
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概要
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This paper presents a theoretical study of the valence band offset of the In_xGa_<1-x>As/GaAs strained-layer superlattices by the ab initio pseudopotential method on the basis of local density functional formalism (LDF). The strain of the superlattice is determined by the valence force field method (VFF), and the spin-orbit interaction is included a posteriori. In these superlattices, heavy holes and light holes are confined in the In_xGa_<1-x> and GaAs layers, respectively. Also studied is the conduction band offset ratio, which is almost indepdent of the In content x.
- 社団法人応用物理学会の論文
- 1990-04-20
著者
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SHIRAISHI Kenji
NTT Basic Research Laboratories
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Shiraishi Kenji
Ntt Basic Research Laboratory
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Ohno Takahisa
Ntt Basic Research Laboratory:(present Address) Ntt Lsi Laboratory
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