A Theoretical Investigation of Migration Potentials of Ga Adatoms near Kink and Step Edges on GaAs(001)-(2×4) Surface
スポンサーリンク
概要
- 論文の詳細を見る
Migration potentials of Ga adatoms near kink and step edges are qualitatively investigated using empirical interatomic potential and an energy term. The energy term, as a function of the number of electrons remaining in the Ga dangling bond, is extracted from ab initio pseudopotential calculations. The calculated results imply that the lattice sites in the missing dimer row are favorable for Ga adatoms on the GaAs(001)-(2×4)β2 surface, since the formation of Ga dimers reduces the number of electrons remaining in Ga dangling bonds. Lattice sites in the missing dimer row near a kink and B-type step edge are stable for a Ga adatom, whereas no preferential adsorption site is found near an A-type step edge. This is simply because a Ga adatom in the missing dimer row near a kink and B-type step edge is weakly stretched by an As atom and As-dimer on the plane one layer below as opposed to being strongly stretched by two As-diners near an A-type step edge.
- 社団法人応用物理学会の論文
- 1996-08-01
著者
関連論文
- First-principles Study on the Stable Molecular Structures of Peptide Nanotubes
- Carbon in III-V Compounds: A Theoretical Approach
- Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
- Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
- Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
- Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
- The Effect of Chlorine on Silicon Oxidation : Simulation based on the Interfacial Silicon Emission Model
- Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
- Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
- Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
- Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model
- Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission
- Ferromagnetism in Semiconductor Dot Array
- A Theoretical Investigation of the Metastability of Epitaxial Zinc-Blende CdSe on (100) Zinc-Blende Substrate
- Phenomenological Theory of Semiconductor Epitaxial Growth with Misfit-Dislocations
- A Theoretical Investigation of the Potential for Infer-Surface Migration of Ga Adatoms between GaAs(001) and (111)B Surfaces
- A Method for Calculating Momentum Matrix Elements with Pseudopotentials
- Universal Theory of Si Oxidation Rate Taking Account of Interfacial Si Emission
- First-Principles Study of the Oxide Growth Process on Silicon Surfaces and at Silicon-Oxide/Silicon Interfaces
- Stable Microstructures on a GaAs(111)A Surface : the Smallest Unit for Epitaxial Growth
- Reflectance Difference Spectra Calculations of GaAs(001) As- and Ga-rich Reconstruction Surface Structures
- Electric Field Induced Recombination Centers in GaAs
- A Theoretical Investigation of the Epitaxial Relationship of NiAl/AlAs
- A Theoretical Investigation of the Metastability of Al on a (100) Zinc Blende Substrate
- A Pseudopotential Approach to Mixing Enthalpies of (III-V)_(IV_2)_x : Semiconductors and Semiconductor Devices
- Theoretical Investigation of the Adsorption Behavior of Si Adatoms on GaAs (001)-(2×4) Surfaces
- Electron Counting Monte Carlo Simulation of the Structural Change of the GaAs(001)-c (4×4) Surface during Ga Predeposition
- A Theoretical Inverstigation of Stable Lattice Sites for In Adatoms on GaAs(001)-(2×4) Surface
- Theoretical Investigations of Adsorption Behavior on GaAs(001) Surfaces
- Valence Band Offsets of the In_xGa_As/GaAs Strained-Layer Superlattice
- First Principle Calculation of the DX-Center Ground-States in GaAs,Al_xGa_As Alloys and AlAs/GaAs Superlattices
- A Theoretical Investigation of the Epitaxial Relationship of Al/AlAs(001)
- Theoretical Studies on Electronic Structures of Polypeptide Chains
- A Theoretical Investigation of Migration Potentials of Ga Adatorms near Step Edges on GaAs(001)-c(4 × 4) Surface
- A New Slab Model Approach for Electronic Structure Calculation of Polar Semiconductor Surface
- First-Principles Study on Electronic Structures of Protein Nanotubes
- Electronic Structures of Protein Nanotubes
- A Pseudopotential Approach to the Formation of Group IV Interstitial in III–V Semiconductors
- A Theoretical Investigation of Migration Potentials of Ga Adatoms near Kink and Step Edges on GaAs(001)-(2×4) Surface
- The Effect of Chlorine on Silicon Oxidation: Simulation based on the Interfacial Silicon Emission Model